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A Resistive Memory in Semiconducting BiFeO<sub>3</sub> Thin‐Film Capacitors
Jiang, An Quan,Wang, Can,Jin, Kui Juan,Liu, Xiao Bing,Scott, James F.,Hwang, Cheol Seong,Tang, Ting Ao,Lu, Hui Bin,Yang, Guo Zhen WILEY‐VCH Verlag 2011 ADVANCED MATERIALS Vol.23 No.10
<P><B>A ferroelectric‐resistive random access memory consisting of a conductive BiFeO<SUB>3</SUB></B> epitaxial thin film with a unipolar diode current modulated by electric polarization orientation is reported. This device has a memory that lasts for months, a sufficiently high on current and on/off ratio to permit ordinary sense amplifiers to measure “1” or “0”, and is fully compatible with complementary metal‐oxide semiconductor processing. </P>