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박성일,박이순,박세광 경북대학교 센서기술연구소 1994 센서技術學術大會論文集 Vol.5 No.1
This paper deals with piezoresistive humidity sensor used polycrystalline silicon (Poly-Si) with diaphragm in sensors of semiconductor. Poly-Si piezoresistors are deposited on silicon wafer, diaphragm is formed with micromachining technology, then hygroscopic layer is formed with polyimide. Whereas conventional humidity sensors is based on the change in electrical properties of the material in this case the humidity induced volume change of a polyimide layer leads to a deformation of a silicon membrane. This deformation is transformed into an output voltage by Poly-Si piezoresistive heatstone bridge. Fabricated piezoresistive humidity sensors showed sensitivity of 0.8[mV/V], nonlinearity of ±2.0[%RH/FS], response time of 60~100 [sec] and good long term stability.