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A novel quasi-one-dimensional topological insulator in bismuth iodide β-Bi<sub>4</sub>I<sub>4</sub>
Autè,s, Gabriel,Isaeva, Anna,Moreschini, Luca,Johannsen, Jens C.,Pisoni, Andrea,Mori, Ryo,Zhang, Wentao,Filatova, Taisia G.,Kuznetsov, Alexey N.,Forró,, Lá,szló,Van den Broek, Nature Publishing Group, a division of Macmillan P 2016 NATURE MATERIALS Vol.15 No.2
Recent progress in the field of topological states of matter has largely been initiated by the discovery of bismuth and antimony chalcogenide bulk topological insulators (TIs; refs ,,,), followed by closely related ternary compounds and predictions of several weak TIs (refs ,,). However, both the conceptual richness of Z<SUB>2</SUB> classification of TIs as well as their structural and compositional diversity are far from being fully exploited. Here, a new Z<SUB>2</SUB> topological insulator is theoretically predicted and experimentally confirmed in the β-phase of quasi-one-dimensional bismuth iodide Bi<SUB>4</SUB>I<SUB>4</SUB>. The electronic structure of β-Bi<SUB>4</SUB>I<SUB>4</SUB>, characterized by Z<SUB>2</SUB> invariants (1;110), is in proximity of both the weak TI phase (0;001) and the trivial insulator phase (0;000). Our angle-resolved photoemission spectroscopy measurements performed on the (001) surface reveal a highly anisotropic band-crossing feature located at the point of the surface Brillouin zone and showing no dispersion with the photon energy, thus being fully consistent with the theoretical prediction.
Shape and spin determination of Barbarian asteroids
Devogè,le, M.,Tanga, P.,Bendjoya, P.,Rivet, J. P.,Surdej, J.,Hanuš,, J.,Abe, L.,Antonini, P.,Artola, R. A.,Audejean, M.,Behrend, R.,Berski, F.,Bosch, J. G.,Bronikowska, M.,Carbognani, A.,Ch Springer-Verlag 2017 Astronomy and astrophysics Vol.607 No.-
Jèrèmy Bauchet,Sylvain Giroux,Hélène Pigot,Dany Lussier-Desrochers,Yves Lachapelle 한국과학기술원 인간친화 복지 로봇 시스템 연구센터 2008 International Journal of Assistive Robotics and Me Vol.9 No.4
Cognitively impaired people in general and people with intellectual disabilities in particular may suffer from deficits of attention, initiation, memory, or planning. Such deficits prevent them to perform accurately and successfully their activities of daily living(ADL). Meal preparation is a significant ADL for achieving autonomous living. Thanks to Archipel, a pervasive cognitive assistant for meal preparation, they can improve and foster their autonomy and auto-determination. A study involving twelve(12) persons with intellectual disabilities demonstrated that archipel, pervasive computing, and ambient intelligence are very promising technologies.
First-principles investigation of two-dimensional trichalcogenide and sesquichalcogenide monolayers
Debbichi, L.,Kim, H.,Bjö,rkman, T.,Eriksson, O.,Lebè,gue, S. American Physical Society 2016 Physical Review B Vol.93 No.24
<P>We have used density functional theory to investigate the dynamical stability and the electronic structure of several new semiconducting two-dimensional single layers, with chemical compositions such as ABX(3) and A(2)X(3). The calculated interlayer binding energies and the absence of imaginary states in the phonon spectra indicate the possibility to isolate them in the form of a single layer. Also, the calculated band edges reveal that some of these two-dimensional materials are promising candidates for water-splitting applications.</P>
Stabilization of monodisperse electrosprays in the multi-jet mode via electric field enhancement
Duby, Marie-Hé,lè,ne,Deng, Weiwei,Kim, Kyoungtae,Gomez, Tommaso,Gomez, Alessandro Elsevier 2006 Journal of aerosol science Vol.37 No.3
<P><B>Abstract</B></P><P>The electrospray of conducting liquids operated in the cone-jet mode is well known to have the unique ability of generating droplets uniform in size over a phenomenal range of sizes depending primarily on the liquid flow rate and physical properties. Since there is a monotonic dependence of size on flow rate, the liquid flow rates that can be dispersed are modest if the goal is to produce very small (below a few micrometers in diameter) droplets. Yet, this is precisely the application niche for which few, if any, atomization alternatives are available. Multiplexing the spray source is indispensable for the electrospray capabilities to have an impact in high-value-added applications. We report here on a novel approach to multiplexing based on a well-known, but hitherto unexploited, regime of operation, the multi-jet mode. Ordinarily, such a mode is rather unsteady and the range of flow rates at which appreciable multiplexing is achieved is small. However, if the multi-jet mode is anchored by some sharp features (e.g., grooves, ridges, etc.) machined at the outlet of the atomizer, to intensify the electric field at discrete points around its perimeter, then the cone-jets are simultaneously anchored at these features and a stable mode of operation is identified over several hundreds of volts and a broad range of flow rates. Most importantly, so long as the machining is accurately reproduced from point to point, droplets generated do not vary significantly in size from spray to spray. As a result, a compact, inexpensive and versatile multiplexing system is realized without sacrificing droplet monodispersity.</P>
Sidewall mobility and series resistance in a multichannel tri-gate MOSFET
Park, S J,Jeon, D-Y,Montè,s, L,Barraud, S,Kim, G-T,Ghibaudo, G Institute of Physics 2013 Semiconductor science and technology Vol.28 No.6
<P>The sidewall mobility and the series resistance in a multichannel tri-gate MOSFET were examined with low-temperature measurement and 2D numerical simulation. With sidewall mobility separated from total transfer characteristics, it was shown that the sidewall conduction is mainly affected by the surface roughness scattering. The effect of surface roughness scattering on sidewall mobility was evaluated with the mobility degradation factor normalized by the low field mobility, which exhibited an almost six times higher value than that of top surface mobility. The series resistance of the multichannel tri-gate MOSFET was studied by comparing with that of the planar MOSFET. Through 2D numerical simulation, it was revealed that relatively high series resistance of the multichannel tri-gate MOSFET is attributed to the variation of doping concentration in the source/drain extension region in the device.</P>