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Zhaoyue Lü,Zhenbo Deng,Zheng Chen,Hailiang Du,Ye Zou,Denghui Xu,Yongsheng Wang 한국물리학회 2011 Current Applied Physics Vol.11 No.3
A series of small molecular organic light-emitting diodes (OLEDs) based on tris (8-hydroxyquinoline)aluminum (Alq_3) was fabricated by varying thicknesses and positions of cesium chloride (CsCl) layer inside Alq_3 layer. Both luminance and efficiency are enhanced due to the improvement of electron injection when a CsCl layer was deposited between Alq3 and aluminum (Al). For the insertion of the CsCl layer at the 10 nm position inside Alq3 layer away from Al cathode, the enhanced current density and luminance are attributed to the reaction between diffused Al and Cs. And the efficiency and luminance are enhanced due to the trap sites induced by the CsCl layer at the distance of 20 and 30 nm away from the Al cathode. The current density and luminance of devices, in which various thicknesses of CsCl layer was inserted at 20 nm position inside Alq3 layer away from the Al cathode, is affected by both hole trapped and insulating layer effects.
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Enhancing properties of organic light-emitting diodes with LiF inside the hole transport layer
Enyu Zhou,Zhenbo Deng,Zhaoyue Lv,Zheng Chen,Denghui Xu,Yongsheng Wang 한국물리학회 2009 Current Applied Physics Vol.9 No.6
A new device has been made by inserting thin LiF layer in N,N0-diphenyl-N,N0-bis(1-napthyl–phenyl)-1, 10-biphenyl-4,40-diamine (NPB), which has a configuration of ITO/NPB(20 nm)/LiF(0.5 nm)/NPB(20 nm)/ Alq3(60 nm)/LiF(0.5 nm)/Al. Compared with normal device, the device inserted LiF layer inside NPB (HTL) can improve its performance. The luminance and efficiency is about 1.4 and 1.3 folds high of the conventional structure, respectively. The suggestion mechanism is that the LiF in the NPB layer can block holes of NPB, and balance the holes and electrons. Consequently, there are more excitons formed to boost the diode’s luminance and efficiency. And it may offer some valuable references for OLED’s structure. A new device has been made by inserting thin LiF layer in N,N0-diphenyl-N,N0-bis(1-napthyl–phenyl)-1, 10-biphenyl-4,40-diamine (NPB), which has a configuration of ITO/NPB(20 nm)/LiF(0.5 nm)/NPB(20 nm)/ Alq3(60 nm)/LiF(0.5 nm)/Al. Compared with normal device, the device inserted LiF layer inside NPB (HTL) can improve its performance. The luminance and efficiency is about 1.4 and 1.3 folds high of the conventional structure, respectively. The suggestion mechanism is that the LiF in the NPB layer can block holes of NPB, and balance the holes and electrons. Consequently, there are more excitons formed to boost the diode’s luminance and efficiency. And it may offer some valuable references for OLED’s structure.
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