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KwanLee,HoonSangChoi,Jong-HanLee,YuMinJang,In-HoonChoi 한국물리학회 2002 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.40 No.4
It has been found that the crystallinity of the ferroelectric phase for SrBi2Ta2O9 (SBT) thin lms prepared by metalorganic decomposition (MOD) depends on the partial oxygen pressure during rapid thermal annealing (RTA). Under a partial oxygen pressure as high as 130 Torr, the crystallization temperature inducing the ferroelectric SBT phase could be lowered to 650 C. Those lms processed at 650 C presented satisfactory ferroelectric properties; that is, the memory window was 1.22.2 V at an applied voltage of 37 V. This memory window is superior to that of SBT annealed using the conventional MOD method. In comparison with the SBT thin lms prepared at 800 C in an O2 ambient by using furnace annealing, the SBT thin lms prepared at 650 C in a partial oxygen pressure by using the RTA process showed good crystallization and electrical properties.