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Takao, Hidekuni,Matsumoto, Yoshinori,Seo, Heedon,Ishida, Makaoto,Nakamura, Tetsuro 경북대학교 센서기술연구소 1995 센서技術學術大會論文集 Vol.6 No.1
A novel piezoresistive silicon accelerometer using SOI (Silicon On Insulator) structure is described. The accelerometer has high temperature resistance realized by perfect isolation of piezoresistors. Furthermore, the accelerometer can detect three dimensional acceleration vector with a new principal using simple analog operational circuits. FEM (Finite Element Modeling) analysis were carried out with a commercial package, ANSYS for design of the device structure and estimation of the device characteristics. Temperature characteristics and output characteristics of fabricated devices were measured, and compared with the simulated results. As the result of comparison, good agreement was obtained.
Lee, Young-Tae,Seon, Hee-Don,Kawamura, Akihisa,Matsumoto, Yoshinori,Ishida, Makoto,Nakamura, Tetsuro 경북대학교 센서기술연구소 1994 센서技術學術大會論文集 Vol.5 No.1
In order to reduce the offset and its temperature drift by the different properties of the piezoresistors and the residual stress of the piezoresistive pressure sensor, a double Wheatstone-bridge pressure sensor was studied. Because the compensation bridge was arranged near by the pressure sensitive bridge, which have the similar offset components, reduction of the offset and its temperature drift was realized by the mathematical subtraction of the output of the two bridges. It was confirmed the compensation of the offset and its temperature drift. By this compensation method, the offset and its temperature drift were reduced approximately 94% and 70%, respectively. The sensitivity of the fabricated pressure sensor was 11.7 mV/V kgfcm^(-2) for 0.9 kgfcm^(-2) full-scale pressure range.