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Dynamical Control for the Parametric Uncertain Cancer Systems
Yi-Horng Lai,Lan-Yuen Guo,Kun-Ching Wang,Jau-Woei Perng 제어·로봇·시스템학회 2020 International Journal of Control, Automation, and Vol.18 No.9
In this study, we consider a parametric uncertain Lotka–Volterra cancer model including three interacting cell populations of tumor cells, healthy host cells and immune effector cells. The biological parameter (i.e., cell growth rate) is described as a form of the triangular fuzzy number. By using grade mean value conversion, the imprecise fuzzy parameter is translated into the degree of optimism (λ-integral value λ ∈ [0,1]) interval. We derive the sufficient conditions for the existence of the region of asymptotic stability (RAS) in the fuzzy cancer model. The boundary crisis of transient chaos and properties of RAS are investigated under fuzzy environment. We present a dynamical perturbation control to avoid uncontrolled tumor cell growth and prevent healthy cell extinction.
Lai, Wen-Cheng,Jang, Sheng-Lyang,Liu, Yi-You,Juang, Miin-Horng The Institute of Electronics and Information Engin 2016 Journal of semiconductor technology and science Vol.16 No.4
A triple-band (TB) oscillator was implemented in the TSMC $0.18{\mu}m$ 1P6M CMOS process, and it uses a cross-coupled nMOS pair and two shunt $4^{th}$ order LC resonators to form a $6^{th}$ order resonator with three resonant frequencies. The oscillator uses the varactors for band switching and frequency tuning. The core current and power consumption of the high (middle, low)- band core oscillator are 3.59(3.42, 3.4) mA and 2.4(2.29, 2.28) mW, respectively at the dc drain-source bias of 0.67V. The oscillator can generate differential signals in the frequency range of 8.04-8.68 GHz, 5.82-6.15 GHz, and 3.68-4.08 GHz. The die area of the triple-band oscillator is $0.835{\times}1.103mm^2$.
Wen-Cheng Lai,Sheng-Lyang Jang,Yi-You Liu,Miin-Horng Juang 대한전자공학회 2016 Journal of semiconductor technology and science Vol.16 No.4
A triple-band (TB) oscillator was implemented in the TSMC 0.18 ㎛ 1P6M CMOS process, and it uses a cross-coupled nMOS pair and two shunt 4<SUP>th</SUP> order LC resonators to form a 6<SUP>th</SUP> order resonator with three resonant frequencies. The oscillator uses the varactors for band switching and frequency tuning. The core current and power consumption of the high (middle, low)- band core oscillator are 3.59(3.42, 3.4) ㎃ and 2.4(2.29, 2.28) ㎽, respectively at the dc drain-source bias of 0.67V. The oscillator can generate differential signals in the frequency range of 8.04-8.68 ㎓, 5.82-6.15 ㎓, and 3.68-4.08 ㎓. The die area of the triple-band oscillator is 0.835 × 1.103 ㎟.