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RISS 인기검색어
- 검색키워드
- 저자 : Yarling, C. B. (검색결과 2 건)
- 무료
- 기관 내 무료
- 유료
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RAPID THERMAL PROCESSING CHARACTERIZATION
Yarling, C. B.,Keenan, W. A. 대한전자공학회 1989 ICVC : International Conference on VLSI and CAD Vol.1 No.1
The first application of rapid thermal processing (RTP) equipment was in annealing ion implanted silicon wafers. It was for this reason that until recently the equipment was referred to as rapid thermal anneal (RTA) equipment. As with ion implanters, two very important process parameters for RTP equipment are the repeatability and the uniformity. Sheet resistance mapping of ion implanted wafers has become a standard technique for monitoring the uniformity and repeatability of RTP equipment. Certain implants (species and dose) have been found to be very sensitive to the temperature distribution. High-dose (≥5E15 ions/ ㎠) arsenic wafers with a cap oxide are excellent vehicles for monitoring RTP equipment. Vendors' RTP equipment shows a characteristic fingerprint on their Rs maps, similar to the early maps of ion implant equipment. Maps from several RTP equipment round robins are presented that demonstrate problems with temperature distribution, chamber thermal memory, rapid edge cooling, and the heat sink effects at wafer supports. One problem associated with using ion implanted wafers to monitor RTP is the complex interaction between implant uniformity and RTP uniformity. It has been impossible to separate the contributions of the implanter and the RTP equipment in the final sheet resistance map. The traditional approach has been to furnace-anneal several wafers from a batch implant and verify that the uniformity is well below the expected RTP uniformity, say less than 0.5%. A new technique has been developed that provides the software to separate the implant uniformity from the RTP uniformity. This provides unambiguous results for the RTP and allows the use of implants with poorer or unknown uniformity.
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ION IMPLANT UNIFORMITY MAPPING
Keenan, W. A.,Yarling, C. B. 대한전자공학회 1989 ICVC : International Conference on VLSI and CAD Vol.1 No.1
When ion implantation (I/I) was first introduced, implanter manufacturers' claims of 2% wafer-to-wafer repeatability and 2% wafer uniformity were beyond the precision of the measurement techniques then available to characterize the process. In the past ten years, however, implanter performance as well as process monitoring techniques have significantly improved. In addition, new monitoring techniques have been introduced. Five techniques are currently available for monitoring ion implant uniformity: sheet resistance, pulsed C-V, thermal wave, optical constant monitoring using ellipsometry, and optical densitometry. Sheet resistance and pulsed C-V are direct electrical measurements of the active dopant atoms. The other three techniques monitor dose by measuring the implant damage. Thermal wave and the optical constant technique measure the damage in the implanted wafer, whereas optical densitometry measures the damage in photoresist on a glass wafer. This paper will review each of these techniques and their relative merits. It will be clear from this presentation that the wise process engineer will use more than one of these techniques to monitor his ion implant equipment as well as the ion implantation process.
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