http://chineseinput.net/에서 pinyin(병음)방식으로 중국어를 변환할 수 있습니다.
변환된 중국어를 복사하여 사용하시면 됩니다.
K. Srinivasa Rao,K. Girija Sravani,Y. Akhil Chowdary,P. Naveena,K. Vedha Vyasa,Himanshu Raina,B. Deepa Sunanda 한국전기전자재료학회 2022 Transactions on Electrical and Electronic Material Vol.23 No.4
This paper presents the design and analysis of an RF MEMS Shunt switch with low pull-in voltage and good RF performance. The switch includes a vertically deforming beam which includes perforations and meanders. This switch is developed to run at a Radio Frequency (RF) of 35 GHz. The signifi cant accomplishments in this work are the pull in voltage that is minimized to 3.72 V, and the return loss is listed below -26.6 dB, the insertion loss is listed less than -0.22 dB and isolation is -36.4 dB. The up and down capacitance of the switch is 110fF, 1.58pF, and the obtained capacitance ratio is 113.5. The product utilized for the CPW line is Gold (Au). The dielectric product utilized in between the beam and the CPW transmission line is Silicon Nitride (Si3N4). We achieved electromechanical analysis through COMSOL software and RF analysis is done using HFSS software.