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Temperature Dependence of Electron Mobility in Uniaxial Strained nMOSFETs
Wookyung Sun,Hyungsoon Shin 대한전자공학회 2014 Journal of semiconductor technology and science Vol.14 No.2
The temperature dependence of strainenhanced electron mobility in nMOSFETs is investigated by using a self-consistent Schrodinger-Poisson solver. The calculated results suggest that vertical compressive stress is more efficient to maintain the strain-enhanced electron mobility than longitudinal tensile stress in high temperature condition.
Temperature Dependence of Electron Mobility in Uniaxial Strained nMOSFETs
Sun, Wookyung,Shin, Hyungsoon The Institute of Electronics and Information Engin 2014 Journal of semiconductor technology and science Vol.14 No.2
The temperature dependence of strain-enhanced electron mobility in nMOSFETs is investigated by using a self-consistent Schr$\ddot{o}$dinger-Poisson solver. The calculated results suggest that vertical compressive stress is more efficient to maintain the strain-enhanced electron mobility than longitudinal tensile stress in high temperature condition.
Wookyung Sun,Sujin Choi,Hyungsoon Shin 대한전자공학회 2014 Journal of semiconductor technology and science Vol.14 No.5
The substrate doping concentration dependence of strain-enhanced electron mobility in (110)/<110> nMOSFETs is investigated by using a self-consistent Schrodinger-Poisson solver. The electron mobility model includes Coulomb, phonon, and surface roughness scattering. The calculated results show that, in contrast to (100)/<110> case, the longitudinal tensile strain-induced electron mobility enhancement on the (110)/<110> can be increased at high substrate doping concentration.
Read margin analysis of crossbar arrays using the cell-variability-aware simulation method
Sun, Wookyung,Choi, Sujin,Shin, Hyungsoon Elsevier 2018 Solid-state electronics Vol.140 No.-
<P><B>Abstract</B></P> <P>This paper proposes a new concept of read margin analysis of crossbar arrays using cell-variability-aware simulation. The size of the crossbar array should be considered to predict the read margin characteristic of the crossbar array because the read margin depends on the number of word lines and bit lines. However, an excessively high-CPU time is required to simulate large arrays using a commercial circuit simulator. A variability-aware MATLAB simulator that considers independent variability sources is developed to analyze the characteristics of the read margin according to the array size. The developed MATLAB simulator provides an effective method for reducing the simulation time while maintaining the accuracy of the read margin estimation in the crossbar array. The simulation is also highly efficient in analyzing the characteristic of the crossbar memory array considering the statistical variations in the cell characteristics.</P>
Sun, Wookyung,Choi, Sujin,Lim, Hyein,Shin, Hyungsoon IOP Publishing 2016 Japanese journal of applied physics Vol.55 No.4
<P>The 1/2 and 1/3 bias schemes are commonly used to select a cell in a resistive random access memory (ReRAM) crossbar array. The 1/3 bias scheme is advantageous in terms of its write margin but typically requires a higher power consumption than the 1/2 bias scheme. The power consumption of ReRAM can vary according to the nonlinearity of the selector device. In this paper, we propose a power guideline model that suggests selector nonlinearity requirements to guarantee a lower power consumption for the 1/3 bias scheme than for the 1/2 bias scheme. Therefore, the selector nonlinearity requirements for the low power consumption of the 1/3 bias scheme can be immediately obtained using this guideline model without simulation. (C) 2016 The Japan Society of Applied Physics</P>
A new bias scheme for a low power consumption ReRAM crossbar array
Sun, Wookyung,Choi, Sujin,Shin, Hyungsoon Institute of Physics 2016 Semiconductor science and technology Vol.31 No.8
<P>This paper proposes a new bias scheme for a crossbar array that can improve the power consumption and read margin. The concept of the newly proposed 5/12 bias scheme is to reduce the bias of the unselected cells for power consumption and the bias of half-selected cells for a reduced line voltage drop of the selected cell. In the 5/12 bias scheme, the unselected word line and bit line are biased to 5 × <I>V</I> <SUB>app</SUB>/12 and 7 × <I>V</I> <SUB>app</SUB>/12, respectively. The electrical characteristics of the 5/12 bias scheme are evaluated by HSPICE simulations and it is found that appropriate nonlinearity of selector can simultaneously achieve low power consumption and high read margin for 5/12 bias scheme.</P>
Sun, Wookyung,Choi, Sujin,Shin, Hyungsoon The Institute of Electronics and Information Engin 2014 Journal of semiconductor technology and science Vol.14 No.5
The substrate doping concentration dependence of strain-enhanced electron mobility in (110)/<110> nMOSFETs is investigated by using a self-consistent Schr$\ddot{o}$dinger-Poisson solver. The electron mobility model includes Coulomb, phonon, and surface roughness scattering. The calculated results show that, in contrast to (100)/<110> case, the longitudinal tensile strain-induced electron mobility enhancement on the (110)/<110> can be increased at high substrate doping concentration.
Wonhee Lee(Wonhee Lee),Wookyung Sun(Wookyung Sun) J-INSTITUTE 2022 International Journal of Martial Arts Vol.7 No.2
Purpose: The purpose of this study is to investigate the relationship between social support, career adapta-bility, psychological capital, and career preparation behavior of the majored in Judo kata in 2021.To achieve the purpose of this study, the following detailed goals were set. Method: This study collected data from students who completed Judo kata class among students majoring in Judo kata in 2021 to investigate the relationship between Judo kata major's social support, career adaptability, psychological capital and career preparation behavior The data were collected by the researcher in the class of judo kata major after the guidance professor of the university Judo kata explained the purpose and purpose of the study in advance and received permission to collect the data. The data used in the actual analysis was 480 copies in a row, or the contents of the questionnaire were partially omitted. 78 questionnaires were excluded. Results: Therefore, universities need to introduce and implement various career preparation programs to in-crease students' psychological capital and actively implement information collection for their careers to achieve their goals. If they can invest time in consultation rather than interest or support for students, or provide financial support, they will be able to prepare for proper career. Conclusion: In relation to social support and career, environmental factors and educational considerations should be followed up on other departments, and social support, career adaptability, psychological capital, and career preparation behavior according to martial arts or physical education departments should be conducted more reliable research.
The effect of a source-contacted light shield on the electrical characteristics of an LTPS TFT
Kim, Miryeon,Sun, Wookyung,Kang, Jongseuk,Shin, Hyungsoon Institute of Physics 2017 Semiconductor science and technology Vol.32 No.8
<P>The electrical characteristics of a low-temperature polycrystalline silicon thin-film transistor (TFT) with a source-contacted light shield (SCLS) are observed and analyzed. Compared with that of a conventional TFT without a light shield (LS), the on-current of the TFT with an SCLS is lower because the SCLS blocks the fringing electric field from the drain to the active layer. Furthermore, the gate-to-source capacitance (<I>C</I> <SUB>gs</SUB>) of the TFT with an SCLS in the off and saturation regions is higher than that of a conventional TFT, which is due to the gate-to-LS capacitance (<I>C</I> <SUB>g-LS</SUB>). The electrical characteristics of the TFT with an SCLS are thoroughly investigated by two-dimensional device simulations, and a semi-empirical <I>C</I> <SUB>g-LS</SUB> model for SPICE simulation is proposed and verified.</P>