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Kim, Youngmin,Petykiewicz, Jan,Gupta, Shashank,Vuckovic, Jelena,Saraswat, Krishna C.,Nam, Donguk The Institute of Electronics and Information Engin 2015 IEIE Transactions on Smart Processing & Computing Vol.4 No.5
We present a new way to create a thermally stable, highly strained germanium (Ge) optical resonator using a novel Ge-on-dual-insulators substrate. Instead of using a conventional way to undercut the oxide layer of a Ge-on-single-insulator substrate for inducing tensile strain in germanium, we use thin aluminum oxide as a sacrificial layer. By eliminating the air gap underneath the active germanium layer, we achieve an optically insulating, thermally conductive, and highly strained Ge resonator structure that is critical for a practical germanium laser. Using Raman spectroscopy and photoluminescence experiments, we prove that the novel geometry of our Ge resonator structure provides a significant improvement in thermal stability while maintaining good optical confinement.
Seongjae Cho,Chen, R.,Sukmo Koo,Shambat, G.,Lin, H.,Namkyoo Park,Vuckovic, J.,Kamins, T. I.,Byung-Gook Park,Harris, James S. IEEE 2011 IEEE photonics technology letters Vol.23 No.20
<P>In this work, a whispering gallery mode (WGM) microdisk resonator based on Ge<SUB>1-</SUB><I>x</I>Sn<I>x</I> grown by molecular beam epitaxy (MBE) was fabricated and characterized. Various process conditions and different Sn contents (4% and 1%) were explored to confirm the feasibility of Ge<SUB>1-</SUB><I>x</I>Sn<I>x</I> for microcavity device operation. Optical modes with wavelengths in the infrared (IR) range beyond 1550 nm were successfully confined in the devices fabricated with different diameters, and free-spectral ranges (FSRs) near 20 nm were obtained.</P>