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- 검색키워드
- 저자 : Vipin K. Kaushik (검색결과 2 건)
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Akash Shukla,Vipin K. Kaushik,Dixit Prasher 대한금속·재료학회 2014 ELECTRONIC MATERIALS LETTERS Vol.10 No.1
The growth and characterization of MgxZn1-xO thin films by aerosol-assisted chemical vapor deposition (AACVD) technique is reported in this paper. We have grown the thin films of ZnO by adding varying concentrations of magnesium (Mg) on a glass substrate. The precursor from which the MgxZn1-xO thin films were grown was made up of a mixture of zinc acethylacetonate and magnesium acetate tetrahydrate in boiled isopropyl alcohol. Oxygen gas was used as a carrier gas and substrate temperature was maintained at 400°C. MgxZn1-xO thin films were finally characterized by x-ray diffraction (XRD), atomic force microscopy (AFM) and UV-VIS-NIR spectroscopy. XRD results show that MgxZn1-xO thin films displayed a wurtzite structure and addition of Mg leads to a slight shift towards higher 2-theta values. AFM results show that MgZnO thin films were uniformly covered with nano flakes and their size decreases with an increase in Mg content. Optical studies show that with the increase of Mg content, transparency as well energy band gap of the MgxZn1-xO thin films increases, which also agrees with the reported values.
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Optical and structural characterization of aerosol-assisted CVD-grown Ni:ZnO thin films
Natu Krutika,Kaushik Vipin K.,Laad Meena 한국물리학회 2023 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.83 No.3
The present work reports the successful growth and hence, the characterization of Ni:ZnO thin flms with varying Ni contents in precursor solution (xNi = 0.0, 0.10, 1.00, 4.84, 9.25 and 13.27 at.%). The thin flms were fabricated on soda lime glass substrate. An indigenously designed and developed aerosol-assisted chemical vapor deposition (AACVD) system has been used for the deposition of Ni:ZnO thin flm. Zinc acetylacetonate and Nickel acetylacetonate were used as a source material for Zn and Ni, respectively. To prepare liquid precursor, isopropyl alcohol was used as a solvent for zinc acetylacetonate and Nickel acetylacetonate. The deposition was carried out at a constant growth temperature of 500 oC with oxygen as a carrier gas for the precursor. Raman spectroscopy, XRD and UV–visible spectroscopy characterizations were performed to investigate the efect of varying xNi content over the optical as well as the structural properties of Ni:ZnO thin flms. The average transmittance of undoped and Ni-doped ZnO came out to be about ≥ 95%. The calculated thickness of Ni:ZnO was found to be of the order of hundreds of nanometre i.e., the thin flms of sub-micron-sized thickness have been fabricated. The measured bandgaps of Ni:ZnO thin flm were found to decrease (red shift) with increasing Ni content in precursor solution. The AACVD-grown Ni:ZnO thin flms was found to have low-average absorbance approximately 1% and average refectance approximately 4%. The XRD characteristic spectra of Ni:ZnO thin flms reveal that the required phase is present with a little amount of impurities that matches well with the JCPDS data indicating the hexagonal structure. The particle sizes measured by the XRD Scherer’s formula, values of lattice constants and the volume of unit cell of Ni:ZnO were found to be in a good agreement with literature. Raman spectra of pure and Ni-doped ZnO thin flms have been measured at room temperature in the wave number range 150–1300 cm−1 . A1(TO) modes are obtained in the range of 382–384 cm−1 . While, the modes obtained in the ranges 569–572 cm−1 and 1098–1104 cm−1 are allocated as A1(LO) and A1(2LO) modes respectively.
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