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Phu Huong Lan, Nguyen,Le Thi Phuong, Tu,Nguyen Huu, Hien,Thuy, Le,Mather, Alison E.,Park, Se Eun,Marks, Florian,Thwaites, Guy E.,Van Vinh Chau, Nguyen,Thompson, Corinne N.,Baker, Stephen Public Library of Science 2016 PLoS neglected tropical diseases Vol.10 No.8
<▼1><P>Invasive non-typhoidal <I>Salmonella</I> (iNTS) infections are now a well-described cause of morbidity and mortality in children and HIV-infected adults in sub-Saharan Africa. In contrast, the epidemiology and clinical manifestations of iNTS disease in Asia are not well documented. We retrospectively identified >100 cases of iNTS infections in an infectious disease hospital in Southern Vietnam between 2008 and 2013. Clinical records were accessed to evaluate demographic and clinical factors associated with iNTS infection and to identify risk factors associated with death. Multi-locus sequence typing and antimicrobial susceptibility testing was performed on all organisms. Of 102 iNTS patients, 71% were HIV-infected, >90% were adults, 71% were male and 33% reported intravenous drug use. Twenty-six/92 (28%) patients with a known outcome died; HIV infection was significantly associated with death (<I>p</I> = 0.039). <I>S</I>. Enteritidis (Sequence Types (ST)11) (48%, 43/89) and <I>S</I>. Typhimurium (ST19, 34 and 1544) (26%, 23/89) were the most commonly identified serovars; <I>S</I>. Typhimurium was significantly more common in HIV-infected individuals (<I>p</I> = 0.003). Isolates from HIV-infected patients were more likely to exhibit reduced susceptibility against trimethoprim-sulfamethoxazole than HIV-negative patients (<I>p</I> = 0.037). We conclude that iNTS disease is a severe infection in Vietnam with a high mortality rate. As in sub-Saharan Africa, HIV infection was a risk factor for death, with the majority of the burden in this population found in HIV-infected adult men.</P></▼1><▼2><P><B>Author Summary</B></P><P>Invasive non-typhoidal <I>Salmonella</I> (iNTS) infections occur when <I>Salmonella</I> bacteria, which normally cause diarrhea, enter the bloodstream and spread through the body. Invasive NTS infections have become a common cause of infection and death in children with malaria and adults with HIV in sub-Saharan Africa. However, it is unknown whether iNTS is as common or as severe outside sub-Saharan Africa. We evaluated over 100 iNTS cases from an infectious disease hospital in southern Vietnam admitted between 2008–2013. We used hospital records to determine the clinical features of iNTS disease and to identify risk factors associated with death and performed typing of the isolated organisms. The majority of patients were HIV positive (72/102, 71%), >90% of patients were adults, 71% were male and 33% reported intravenous drug use. The mortality rate of iNTS patients was 28% (26/92), and HIV infection was a significant risk factor for fatal outcome (<I>p</I> = 0.039). The serovars most commonly identified were <I>S</I>. Enteritidis and <I>S</I>. Typhimurium; <I>S</I>. Typhimurium was found more frequently in HIV-positive individuals (<I>p</I> = 0.003). We report that iNTS disease is a severe infection in Vietnam with a high mortality rate. Similar to sub-Saharan Africa, HIV infection was a strong risk factor for death.</P></▼2>
Nguyen, Cam Phu Thi,Trinh, Thanh Thuy,Dao, Vinh Ai,Raja, Jayapal,Jang, Kyungsoo,Le, Tuan Anh Huy,Iftiquar, S M,Yi, Junsin Institute of Physics 2013 Semiconductor science and technology Vol.28 No.10
<P>Indium tin zinc oxide (ITZO)-based thin-film transistors (TFTs) were fabricated by dc magnetron sputtering in Ar + O<SUB>2</SUB> reactive gas, at room temperature. We present the effect of post-deposition annealing of ITZO thin films on the oxygen vacancies and on the characteristics of TFT devices. When the annealing temperature was increased from room temperature to 350 °C, the resistivity of ITZO film increased from 2.05 × 10<SUP>1</SUP> to 2.60 × 10<SUP>3</SUP> Ω cm and the interface trap density (<I>N</I><SUB>t</SUB>) of the TFTs reduced from 3.18 × 10<SUP>13</SUP> to 4.83 × 10<SUP>11</SUP> cm<SUP>−2</SUP>. The TFT with the ITZO film which was annealed at 350 °C showed a very small shift in turn-on voltage, even after applying positive bias stress of +12 V for 10<SUP>4</SUP> s. The current–voltage characteristics of 350 °C annealing temperature sample indicated that these TFTs were in an enhanced mode of transistor operation with a high on-to-off current ratio of ∼1.26 × 10<SUP>6</SUP>, high field-effect mobility of 14.17 cm<SUP>2</SUP> V<SUP>−1</SUP> s<SUP>−1</SUP>, and low subthreshold slope of 1.23 V/dec. The trapping time reduced from 3720 to 1546 s as the annealing temperature increased from room temperature to 350 °C. These results suggest that thermal annealing played an important role in reducing defects as well as improvement in stability of the TFTs.</P>