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Ok Young-Woo,Kim Jong-Hee,Upadhyaya Vijaykumar D.,Rohatgi Ajeet,Hong chang-Hee,Choi Chel-Jong 한국물리학회 2023 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.82 No.7
The contact resistance and sheet resistance of a screen-printed fre-through Ag/Al paste metallization to the implanted B emitters of n-type crystalline Si solar cells were investigated as a function of B doses in the range of 2× 1014 to 5× 1015 cm−2 at a fxed implantation energy of 10 keV. For B emitters implanted with a B dose of>2× 1015 cm−2, the Ag/Al paste contacts showed very low contact resistance (<4.3 mΩ⋅cm2 ) and sheet resistance (<90 Ω/□), which resulted in a negligible contribution to the series resistance (<0.1 Ω⋅cm2 ) in a fnished cell with contacts made by foating and non-foating screen-printing techniques. A comparison of the sheet resistance measured between the transfer length method and four-point probe analyses indicated an increase in carrier concentration of B emitter surface associated with additional doping through the Al difusion from the Ag/Al paste into B emitter. Scanning transmission electron microscopy combined with energy-dispersive X-ray spectroscopy analysis revealed that after the fre-through process, the Al-containing Pb-based glass layer and numerous small Ag/Al crystallites were formed along the emitter surface without the formation of an Al-Si alloy layer.