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COMPLETE CONVERGENCE FOR ARRAYS OF ROWWISE INDEPENDENT RANDOM VARIABLES
Hu, Tien-Chung,Sung, Soo-Hak,Volodin, Andrei Korean Mathematical Society 2003 대한수학회논문집 Vol.18 No.2
Under some conditions on an array of rowwise independent random variables, Hu et at. (1998) obtained a complete convergence result for law of large numbers with rate {a$\_$n/, n $\geq$ 1} which is bounded away from zero. We investigate the general situation for rate {a$\_$n/, n $\geq$ 1) under similar conditions.
성수학,Tien-Chung Hu,Andrei I. Volodin 대한수학회 2006 대한수학회보 Vol.43 No.3
Sung et al. [13] obtained a WLLN (weak law of largenumbers) for the arrayfXni ;un i vn ;n 1g of random vari-ables under a Cesaro type condition, wherefun 1 ;n 1g andfvn + 1 ;n 1g are two sequences of integers. In this paper, weextend the result of Sung et al. [13] to a martingale typep Banachspace.
Sung, Soo-Hak,Hu, Tien-Chung,Volodin, Andrei I. Korean Mathematical Society 2006 대한수학회보 Vol.43 No.3
Sung et al. [13] obtained a WLLN (weak law of large numbers) for the array $\{X_{{ni},\;u_n{\leq}i{\leq}v_n,\;n{\leq}1\}$ of random variables under a Cesaro type condition, where $\{u_n{\geq}-{\infty},\;n{\geq}1\}$ and $\{v_n{\leq}+{\infty},\;n{\geq}1\}$ large two sequences of integers. In this paper, we extend the result of Sung et al. [13] to a martingale type p Banach space.
ON COMPLETE CONVERGENCE FOR ARRAYS OF ROWWISE INDEPENDENT RANDOM ELEMENTS
Sung Soo-Hak,Cabrera Manuel Ordonez,Hu Tien-Chung Korean Mathematical Society 2007 대한수학회지 Vol.44 No.2
A complete convergence theorem for arrays of rowwise independent random variables was proved by Sung, Volodin, and Hu [14]. In this paper, we extend this theorem to the Banach space without any geometric assumptions on the underlying Banach space. Our theorem also improves some known results from the literature.
Dark current suppression of amorphous selenium based photosensors by the ZnO hole blocking layer
Tung-Yuan Yu,Fu-Ming Pan,Cheng-Yi Chang,Tien Hu,Jenn-Fang Chen,Jia-Feng Wang,Jia-Feng Wang,Cheng-Lu Lin,Te-Ming Chen 한국물리학회 2014 Current Applied Physics Vol.14 No.5
To study the influence of defects in the hole blocking layer (HBL) on the dark current of amorphous selenium (a-Se) based photosensors, we prepared ZnO thin films by reactive sputter deposition (RSD) for the use as the HBL of the photosensors. The ZnO HBL layers prepared with different oxygen flow rates were characterized by X-ray photoelectron spectroscopy, Raman scattering analysis and photoluminescence, indicating that the density of oxygen vacancies in the ZnO thin films is significantly affected by the oxygen flow rate. The deep level transient spectroscopy measurement reveals two hole trap levels present in the RSD deposited ZnO thin films; one is at 0.94 eV and the other at 0.24 eV above the valence band edge. The electrical performance of the a-Se photosensor is largely influenced by the amount of oxygen vacancies in the ZnO thin film. The a-Se photosensor with the ZnO HBL of the most oxygen vacancies has the lowest dark current and demonstrates the highest breakdown field.