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Tetsuhiko Miyadera,Manabu Nakayama,Susumu Ikeda,Koichiro Saiki 한국물리학회 2007 Current Applied Physics Vol.7 No.1
Frequency and gate voltage dependences of capacitance in a C60 eld eect transistor (FET) showed an intriguing power law (C / f. p,p . 0.30.35) irrespective of the gate voltage. In order to interpret this phenomenon, we formulated a complex impedance of the bottomlaw could be well explained in terms of the complex impedance formula using only a small number of tting parameters, the results ofwhich indicate the validity of the model. This kind of analysis could usefully characterize the organic FETs consisting of grain bound-aries, providing information on the resistance ratio of the grain interior to the grain boundary. .