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        Increase in Current Density at Metal/GeO2/n‑Ge Structure by Using Laminated Electrode

        Takahiro Tsukamoto,Shota Kurihara,Nobumitsu Hirose,Akifumi Kasamatsu,Toshiaki Matsui,Yoshiyuki Suda 대한금속·재료학회 2020 ELECTRONIC MATERIALS LETTERS Vol.16 No.1

        In a metal/n-Ge structure, Fermi level pinning tends to occur. The insertion of an oxide layer at the interface between electrodes and n-Ge can efectively reduce the Schottky barrier height. However, the attachment of metal and oxide can cause difusion of oxygen to the metal due to Gibbs free energy, which degrades the contact characteristics. In this study, we investigated the efects of a laminated electrode on the current density at a metal/GeO2/n-Ge structure. Ni, Pt, Al, or Ti layers with thicknesses of 0.5–20 nm were formed, followed by a deposition of 200-nm-thick Al. The J–V curves of these samples showed that the current density of the Al/Ti/GeO2/n-Ge structure was the largest among them and was about 126 times larger than that of the Al/GeO2/n-Ge structure. We also found that the current density depended on the flm thickness of Ti and was the highest at the flm thickness of about 2.5 nm or less. To investigate the efect of the Ti interlayer on the current density, we obtained the depth profles of X-ray photoelectron spectroscope spectra of the Al/Ti/GeO2/n-Ge and Al/ GeO2/n-Ge structures. Analysis showed that the difusion of the oxygen to Al was limited by the 20-nm-thick Ti, and the oxygen was difused to Al when the flm thickness of Ti was about 1 nm. These results demonstrate that laminated oxide structures such as AlOx/TiOx and TiOx/GeO2 can form on the sample with 1-nm-thick Ti, which increases the current density.

      • KCI등재

        Efects of Low‑Temperature GeSn Bufer Layers on Sn Surface Segregation During GeSn Epitaxial Growth

        Takahiro Tsukamoto,Nobumitsu Hirose,Akifumi Kasamatsu,Toshiaki Matsui,Yoshiyuki Suda 대한금속·재료학회 2020 ELECTRONIC MATERIALS LETTERS Vol.16 No.1

        We investigate the efects of the low-temperature (LT) GeSn bufer layers on Sn surface segregation during the growth of the additional GeSn layers. Sn surface segregation was observed in the GeSn layers formed on Si substrates at the growth temperature of 300 °C. However, there was no Sn surface segregation in the GeSn layers grown at 300 °C on the LT GeSn bufer layers formed at 225 °C. The Sn surface segregation was limited by the efects of the LT bufer layers. Crystallinity of the GeSn layers grown at 300 °C on the LT GeSn bufer layers was investigated by Raman spectroscopy. The full width at half maximum of the Ge–Ge Raman spectrum obtained from the GeSn layers was about 3.1 cm−1, which means that the formed GeSn layers have excellent crystallinity. We have successfully demonstrated that the LT GeSn bufer layers can limit the Sn surface segregation, which increases the growth temperature and improves crystallinity of the GeSn layers.

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        Phase I/II prospective clinical trial for the hybrid of intracavitary and interstitial brachytherapy for locally advanced uterine cervical cancer

        Naoya Murakami,Miho Watanabe,Takashi Uno,Shuhei Sekii,Kayoko Tsujino,Takahiro Kasamatsu,Yumiko Machitori,Tomomi Aoshika,Shingo Kato,Hisako Hirowatari,Yuko Kaneyasu,Tomio Nakagawa,Hitoshi Ikushima,Ken 대한부인종양학회 2023 Journal of Gynecologic Oncology Vol.34 No.3

        Objective: The purposes of this trial were to demonstrate the feasibility and effectiveness of the hybrid of intracavitary and interstitial brachytherapy (HBT) for locally advanced cervical cancer patients in the phase I/II prospective clinical trial. Methods: Patients with FIGO stage IB2-IVA uterine cervical cancer pretreatment width of which was ≥5 cm measured by magnetic resonance imaging were eligible for this clinical trial. The protocol therapy included 30–30.6 Gy in 15–17 fractions of whole pelvic radiotherapy concurrent with weekly CDDP, followed by 24 Gy in 4 fractions of HBT and pelvic radiotherapy with a central shield up to 50–50.4 Gy in 25–28 fractions. The primary endpoint of phase II part was 2-year pelvic progression-free survival (PPFS) rate higher than historical control of 64%. Results: Between October 2015 and October 2019, 73 patients were enrolled in the initial registration and 52 patients proceeded to the secondary registration. With the median follow-up period of 37.3 months (range, 13.9–52.9 months), the 2- PPFS was 80.7% (90% confidence interval [CI]=69.7%–88%). Because the lower range of 90% CI of 2-year PPFS was 69.7%, which was higher than the historical control ICBT data of 64%, therefore, the primary endpoint of this study was met. Conclusion: The effectiveness of HBT were demonstrated by a prospective clinical study. Because the dose goal determined in the protocol was lower than 85 Gy, there is room in improvement for local control. A higher dose might have been needed for tumors with poor responses.

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