http://chineseinput.net/에서 pinyin(병음)방식으로 중국어를 변환할 수 있습니다.
변환된 중국어를 복사하여 사용하시면 됩니다.
T. Kanashima,M. Okuyama,H. Kanda,K. Ikeda,M. Sohgawa 한국물리학회 2003 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.42 No.IV
High-k thin lms of ZrO2, PrOx of 10 nm thickness have been prepared by pulsed laser deposition, and characterized in microscopic structure and electrical properties. Crystallization is promoted in ZrO2 lms deposited above 400 C, but a signicant XRD peak was not observed in the ZrO2 lm grown below 400 C. The leakage current is decreased by increasing growth temperature, but an equivalent-oxide thickness (EOT) obtained from accumulation capacitance of C .. V characteristics becomes large. The lms deposited at 400 C were annealed at 400 C in O2 gas to reduce the leakage. The leakage current change to be small, but the EOTs become large. Oxygen radical annealing is carried out to reduced the leakage, and is eective for ZrO2 thin lm. On the other hand, only small improvement is observed in the PrOx lms.