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- 저자 : Sunanda Ambulker (검색결과 2 건)
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Varactorless Dual Band Voltage Controlled Oscillator (VCO) for V-band Application
Sunanda Ambulker,Sangeeta Nakhate 대한전자공학회 2018 Journal of semiconductor technology and science Vol.18 No.5
In this paper design and modeling of the dual band technique using transformer is described for V-band Voltage Controlled Oscillator (VCO). VCO has been designed and simulated for dual band operation using an octagonal transformer with two MOS switches as a tunable element in UMC 130 nm single poly eight metals (1P8M) technology. Under 1V supply VCO can be tuned for 51.6 GHz to 64.6 GHz. Phase noise at 10 MHz offset from 64.6 GHz carrier is -116.5 dBc/Hz, while the power dissipation is 6.32 mW. The Proposed VCO achieves the calculated Figure of Merit (FoM) of -184.69 dBc/Hz and provides wide frequency tuning with acceptable low phase noise for V band application.
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Low Phase-noise Voltage-controlled Oscillator for Wireless Personal Area Networks
Sunanda Ambulker,Sangeeta Nakhate 대한전자공학회 2018 IEIE Transactions on Smart Processing & Computing Vol.7 No.1
A novel tuning technique is presented here for 60 GHz applications. Coarse and fine tuning is performed using an octagonal transformer and a metal-oxide semiconductor variable capacitor (varactor), respectively. For the LC tanks inductive element, a transformer is used in which switches are placed at primary and secondary coils to tune the voltage-controlled oscillator (VCO). The classical P- type metal-oxide semiconductor varactor is used as a fine-tuning element with the advantage being that a linear frequency tuning range (FTR) is obtained. In each obtained band, the varactor provides a frequency range of approximately 2.9 GHz. Simulation shows that by on/off switches, obtain three frequency bands (55 GHz to 57.943 GHz, 57.172 GHz to 60.357 GHz, and 59.329 GHz to 62.4 GHz) to cover the whole V-band (60 GHz) frequency. The proposed 60 GHz VCO is designed and simulated using United Microelectronics Corporation’s 65 nm single poly 8 metal (1P810) complementary metal-oxide semiconductor technology. The FTR is from 55 GHz to 62.4 GHz with phase noise variation from -116.5 dBc/Hz to -114.5 dBc/Hz at a 10 MHz offset from the carrier. For the entire FTR, the calculated figure of merit is from 182.8239 dBc/Hz to -181.4564 dBc/Hz.
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