http://chineseinput.net/에서 pinyin(병음)방식으로 중국어를 변환할 수 있습니다.
변환된 중국어를 복사하여 사용하시면 됩니다.
- 中文 을 입력하시려면 zhongwen을 입력하시고 space를누르시면됩니다.
- 北京 을 입력하시려면 beijing을 입력하시고 space를 누르시면 됩니다.
RISS 인기검색어
- 검색키워드
- 저자 : Suleyman OZCELIK (검색결과 2 건)
- 무료
- 기관 내 무료
- 유료
-
Elastic Scattering of Ultra-Cold Bosonic Fr Isotopes
M. Kemal OZTURK,Suleyman OZCELIK 한국물리학회 2008 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.52 No.2
Studies of the total elastic, spin-change and diffusion cross sections in elastic collisions of bosonic Fr isotopes at ultra-cold temperatures are reported. Parametric interaction potentials for singlet and triplet states of Fr isotopes are constructed and used in calculations of the detailed elastic scattering of Fr isotopes in the shape resonance region. As functions of energy, the elastic, spin-change and diffusion cross sections show considerable structure and are large in the limit of low temperature. For temperatures from 32 pico K to 3~K, we compare the numeric and the semiclassical results. Even at temperatures of a few degrees Kelvin, the spin-change and the diffusion cross sections are large and could provide an efficient way to produce condensed Fr. Studies of the total elastic, spin-change and diffusion cross sections in elastic collisions of bosonic Fr isotopes at ultra-cold temperatures are reported. Parametric interaction potentials for singlet and triplet states of Fr isotopes are constructed and used in calculations of the detailed elastic scattering of Fr isotopes in the shape resonance region. As functions of energy, the elastic, spin-change and diffusion cross sections show considerable structure and are large in the limit of low temperature. For temperatures from 32 pico K to 3~K, we compare the numeric and the semiclassical results. Even at temperatures of a few degrees Kelvin, the spin-change and the diffusion cross sections are large and could provide an efficient way to produce condensed Fr.
-
Engin Arslan,Mustafa K. Ozturk,Suleyman Ozcelik,Ekmel Ozbay 한국물리학회 2009 Current Applied Physics Vol.9 No.3
In the present paper, the effects of nitridation on the quality of GaN epitaxial films grown on Si(111) substrates by metal–organic chemical vapor phase deposition (MOCVD) are discussed. A series of GaN layers were grown on Si(111) under various conditions and characterized by Nomarski microscopy (NM), atomic force microscopy (AFM), high resolution X-ray diffraction (HRXRD), and room temperature (RT) photoluminescence (PL) measurements. Firstly, we optimized LT-AlN/HT-AlN/Si(111) templates and graded AlGaN intermediate layers thicknesses. In order to prevent stress relaxation, step-graded AlGaN layers were introduced along with a crack-free GaN layer of thickness exceeding 2.2 ㎛. Secondly, the effect of in situ substrate nitridation and the insertion of an SixNy intermediate layer on the GaN crystalline quality was investigated. Our measurements show that the nitridation position greatly influences the surface morphology and PL and XRD spectra of GaN grown atop the SixNy layer. The X-ray diffraction and PL measurements results confirmed that the single-crystalline wurtzite GaN was successfully grown in samples A (without SixNy layer) and B (with SixNy layer on Si(111)). The resulting GaN film surfaces were flat, mirror-like, and crack-free. The full-width-at-half maximum (FWHM) of the X-ray rocking curve for (0002) diffraction from the GaN epilayer of the sample B in ω-scan was 492 arcsec. The PL spectrum at room temperature showed that the GaN epilayer had a light emission at a wavelength of 365 nm with a FWHM of 6.6 nm (33.2 meV). In sample B, the insertion of a SixNy intermediate layer significantly improved the optical and structural properties. In sample C (with SixNy layer on Al0.11Ga0.89N interlayer). The in situ depositing of the, however, we did not obtain any improvements in the optical or structural properties. In the present paper, the effects of nitridation on the quality of GaN epitaxial films grown on Si(111) substrates by metal–organic chemical vapor phase deposition (MOCVD) are discussed. A series of GaN layers were grown on Si(111) under various conditions and characterized by Nomarski microscopy (NM), atomic force microscopy (AFM), high resolution X-ray diffraction (HRXRD), and room temperature (RT) photoluminescence (PL) measurements. Firstly, we optimized LT-AlN/HT-AlN/Si(111) templates and graded AlGaN intermediate layers thicknesses. In order to prevent stress relaxation, step-graded AlGaN layers were introduced along with a crack-free GaN layer of thickness exceeding 2.2 ㎛. Secondly, the effect of in situ substrate nitridation and the insertion of an SixNy intermediate layer on the GaN crystalline quality was investigated. Our measurements show that the nitridation position greatly influences the surface morphology and PL and XRD spectra of GaN grown atop the SixNy layer. The X-ray diffraction and PL measurements results confirmed that the single-crystalline wurtzite GaN was successfully grown in samples A (without SixNy layer) and B (with SixNy layer on Si(111)). The resulting GaN film surfaces were flat, mirror-like, and crack-free. The full-width-at-half maximum (FWHM) of the X-ray rocking curve for (0002) diffraction from the GaN epilayer of the sample B in ω-scan was 492 arcsec. The PL spectrum at room temperature showed that the GaN epilayer had a light emission at a wavelength of 365 nm with a FWHM of 6.6 nm (33.2 meV). In sample B, the insertion of a SixNy intermediate layer significantly improved the optical and structural properties. In sample C (with SixNy layer on Al0.11Ga0.89N interlayer). The in situ depositing of the, however, we did not obtain any improvements in the optical or structural properties.
연관 검색어 추천
이 검색어로 많이 본 자료
활용도 높은 자료
