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An Analytical Model with Bi-Energetic Trap Level
Stephen Hsin-Li Chen,Canny Chuang,Kun Yu Lin,Matt Shih 한국물리학회 2006 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.48 No.I
A bi-energetic trap level is proposed to establish an analytical model for the activation-energy of turn-on a-Si:H TFT (Thin-Film Transistor). The trap level below the midgap governs the characteristics of activation-energy in the low-VGS region and that above the midgap governs that in the high-VGS region. Good agreement is obtained between measurement and simulation results, and this model can be used as an efficient tool to extract the trap states density of a-Si:H TFT.