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Palei, Srikanta,Parida, Bhaskar,Choi, Jaeho,Kim, Keunjoo American Scientific Publishers 2016 Journal of Nanoscience and Nanotechnology Vol.16 No.10
<P>We investigated mosaic Si solar cells formed by e-beam deposited GaAs and ITO thin films. The mosaic structure in the nanotextured cell was formed by two parallel junctions of n-Si/ITO and n-Si/n-GaAs/ITO. In general, area of the nanotextured Si surface is very large and the loss of electrons is dominant at the surface. The nanotextured mosaic structure enhanced the surface passivation and the interfacial conduction of electrons. The mosaic cells also showed low photoreflectance in the visible/IR region. Quantum efficiencies of the nanotextured mosaic cells were lower than that of the microtextured mosaic cell, but the quantum efficiencies of the all cells were enhanced at 860 nm due to the presence of GaAs. The nanotextured mosaic cells showed the enhanced fill-factors and conversion efficiencies compared to the microtextured mosaic cell.</P>
Formation of Nanopyramidal Structures on Microtextured Si Surfaces for Solar Cell Application
Parida, Bhaskar,Palei, Srikanta,Choi, Jaeho,Kim, Keunjoo American Scientific Publishers 2016 Journal of Nanoscience and Nanotechnology Vol.16 No.10
<P>We investigated the fabrication of nanopyramidal structures on microtextured Si solar cells by metal-assisted chemical and alkaline etching methods. Uniform nanoporous structures were formed on the surface of the microtextured Si solar cell sample. The depth of the nanopores was increased from 100 to 450 nm with increasing the etching time from 30 to 120 sec. The deep nanopores after alkaline etching were converted to dense nanopyramidal structures surrounding the micropyramids of the Si solar cell sample. The sizes of the nanopyramids depend on the depth of the nanopores. The dense nanopyramidal structures with SiNx coating has lower photoreflectance of 1.3% in the wavelength of 400 similar to 800 nm than the reference and the nanotextured samples. The high minority carrier lifetime of the sample with nanopyramid structures indicates that the Auger recombination and the surface recombination are minimized due to the low surface area and large opening of the nanopyramids.</P>
Bhaskar Parida,김근주,최재호,Srikanta Palei,곽승종 한국전기전자재료학회 2015 Transactions on Electrical and Electronic Material Vol.16 No.4
We investigated nanotextured Si solar cells using the silver-assisted chemical etching process. The nanotexturing process is very sensitive to the concentration of chemical etching solution. The high concentration process results in a nanowire formation for the nanosurfaces and causes severe surface damage to the top region of the micropyramids. These nanowires show excellent light absorption in photoreflectance spectra and radiative light emission in photoluminescence spectra. However, the low concentration process forms a nano-roughened surface and provides high minority carrier lifetimes. The nano-roughened surfaces of the samples show the improved electrical cell properties of quantum efficiency, conversion efficiency, and cell fill factor due to the reduction in the formation of the over-doped dead layer.
Nanopyramid Formation by Ag Metal-Assisted Chemical Etching for Nanotextured Si Solar Cells
Bhaskar Parida,김근주,최재호,Srikanta Palei,곽승종 한국전기전자재료학회 2015 Transactions on Electrical and Electronic Material Vol.16 No.4
We investigated the formation of a nanopyramidal structure and fabricated nanotextured Si solar cells using an Ag metal-assisted chemical etching process. The nanopyramidal structure was formed on a Si flat surface and the nanotexturing process was performed on the p-type microtextured Si surface. The nanostructural formation shows a transition from nanopits and nanopores to nanowires with etching time. The nanotextured surfaces also showed the photoluminescence spectra with an enhanced intensity in the wavelength range of 1,100~1,250 nm. The photoreflectance of the nanotextured Si solar cells was strongly reduced in the wavelength range of 337~596 nm. However, the quantum efficiency is decreased in the nanotextured samples due to the increased nanosurface recombination. The nanotexturing process provides a better p-n junction impedance of the nanotextured cells, resulting in an enhanced shunt resistance and fill factor which in turn renders the possibility of the increased conversion efficiency.
Nanopyramid Formation by Ag Metal-Assisted Chemical Etching for Nanotextured Si Solar Cells
Parida, Bhaskar,Choi, Jaeho,Palei, Srikanta,Kim, Keunjoo,Kwak, Seung Jong The Korean Institute of Electrical and Electronic 2015 Transactions on Electrical and Electronic Material Vol.16 No.4
We investigated the formation of a nanopyramidal structure and fabricated nanotextured Si solar cells using an Ag metal-assisted chemical etching process. The nanopyramidal structure was formed on a Si flat surface and the nanotexturing process was performed on the p-type microtextured Si surface. The nanostructural formation shows a transition from nanopits and nanopores to nanowires with etching time. The nanotextured surfaces also showed the photoluminescence spectra with an enhanced intensity in the wavelength range of 1,100~1,250 nm. The photoreflectance of the nanotextured Si solar cells was strongly reduced in the wavelength range of 337~596 nm. However, the quantum efficiency is decreased in the nanotextured samples due to the increased nanosurface recombination. The nanotexturing process provides a better p-n junction impedance of the nanotextured cells, resulting in an enhanced shunt resistance and fill factor which in turn renders the possibility of the increased conversion efficiency.