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        Effect of 60Co g-ray irradiation on electrical properties of Ti/Au/ GaAs1xNx Schottky diodes

        Gebru Zerihun,Gaoshang Gong,Shuai Huang,Songliu Yuan,N. Al Saqri,J.F. Felix,M. Henini 한국물리학회 2016 Current Applied Physics Vol.16 No.8

        Current-voltage (I-V), capacitance-voltage-frequency (C-V-f) and conductance-voltage-frequency (G/u-V-f) measurements at room temperature are used to study 50 kGy 60Co g-ray electrical properties irradiation dependence of Ti/Au/GaAs1xNx Schottky diodes with 0.2%; 0.4%; 0.8% and 1.2% nitrogen dilution. This g-ray irradiation induces a permanent damage that has increased ideality factor and series resistance for all samples. It was accompanied by a decrease in Schottky barrier height with nitrogen content up to 0.4%N and remained constant thereafter. Radiation was also found to degrade the reverse leakage current. At high frequency (1 MHz), capacitance and conductance decreased after radiation due to a decrease in net doping concentration. Interface state density and series resistance were determined from C-V-f and G/u-V-f characteristics using Hill-Coleman methods. Interface states density exponentially decreased with increasing frequency confirming the behavior of interface traps response to ac signal. Series resistance increases after irradiation is attributed to carrier's removal effect andmobility degradation. It has two peaks in the accumulation and inversion region for some diodes (0.4%N, 0.8%N). g-ray irradiation produced traps levels and recombination centers that reduce relaxation time. An increase in %N content can impede irradiation damagewith even some compensationwhen the percent of diluted nitrogen is high (1.2%N).

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        Dielectric relaxation and ferroelectric phase transition in Sr4BiRTi4Nb6O30 (R ¼Sm, Eu) ceramics

        Gebru Zerihun,Gaoshang Gong,Shuai Huang,Songliu Yuan 한국물리학회 2016 Current Applied Physics Vol.16 No.8

        Sr4BiRTi4Nb6O30 (R ¼ Sm, Eu) ceramics with tetragonal tungsten bronze structure were prepared by the conventional solid state reaction method. The crystalline structure, microstructure, dielectric and ferroelectric properties of the ceramics were investigated. Structural analysis using the powder x-ray diffraction patterns revealed the formation of tetragonal tungsten bronze structure in space group P4bm. Columnar grains with a homogeneous distribution were formed in Sr4BiEuTi4Nb6O30 ceramics, while in Sr4BiSmTi4Nb6O30 ceramics the microstructure became inhomogeneous and some abnormal grains were also formed. The dielectric properties of the ceramics exhibited relaxor type phase transition which can be attributed to the random distribution of Bi and Sm/Eu ions at A1-sites and Ti and Nb ions at the B-sites of the TTB structure. The peak temperature shifted towards the higher temperatures and the magnitude of the dielectric constant decreased with increasing frequency. Moreover, the temperature of the dielectric maximum Tm increased as the radius of the R ion getting decreased. From the P-E hysteresis loops, remnant polarization of 0.83 mC/cm2 and 0.6 mC/cm2 were obtained for Sr4BiEuTi4Nb6O30 and Sr4BiSmTi4Nb6O30, respectively.

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