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Strain-controlled Flexible DNA-curcumin on PET Substrate
Siva Pratap Reddy Mallem(말렘 시바 프래탑 래디),Jung-Hee Lee(이정희) 대한기계학회 2021 대한기계학회 춘추학술대회 Vol.2021 No.4
High-performance strain-modulated flexible sensors are significant modules of the systems for human motion detection, electronic skin, human-machine interaction, soft robotics, etc., which are intended as important technologies for applications in future human personal healthcare monitoring and artificial intelligence. Resistive switching, which use modification in resistance measurement, is considered as one of the prospective candidate for the future generation key technology. We introduce a simple technique to fabricate a flexible resistive-type strain sensor composted of DNA-curcumin composite and graphene on polyethylene terephthalate (PET) substrate. Double helical DNA has unique attributes including its high thermal stability, high negative charge density and strong resistance to both bending and twisting. Particularly, flexible DNA-curcumin/graphene on PET substrate displays piezo-resistive characteristics, is likely a good candidate for fabricating resistance-based strain sensors.
Gate Architecture Effects on the Gate Leakage Characteristics of GaN Wrap‑gate Nanowire Transistors
Siva Pratap Reddy Mallem,Ki‑Sik Im,Terirama Thingujam,Jung‑Hee Lee,Raphael Caulmilone,Sorin Cristoloveanu 대한금속·재료학회 2020 ELECTRONIC MATERIALS LETTERS Vol.16 No.5
Gate leakage current in lateral GaN wrap-gate nanowire transistors (WG-NWT) was investigated using current density–voltage (Jg–Vg) characteristics at room temperature. We found that the gate leakage current is strongly dependent on thetop corner angle of the gate architecture. This leakage current was characterized by considering hopping (Poole–Frenkelemission) and trap-assisted thermionic emission mechanisms. Despite its smaller gate area, the gate leakage current of thelateral GaN WG-NWT without a 2DEG channel was higher than that of the device with a 2DEG channel for all applied gatebiases. The reason for this is that the lateral GaN WG-NWT without 2DEG channel has a triangular cross-section with asharp top corner angle resulting in a strong electric field due to geometrical field enhancement.
Siva Pratap Reddy Mallem,Peddathimmula Puneetha,Kalupudi Subramanyam,Varra Rajagopal Reddy,이동연,김영래,안성진,박귀일 한국화학공학회 2023 Korean Journal of Chemical Engineering Vol.40 No.4
Cubic-structured europium (Eu) doped zinc sulfide (ZnS) nanoparticles (NPs) were prepared via refluxing at 150 °C. Absolute structural studies showed that Eu+ ions were successfully substituted into the ZnS host lattice and changed the original structure of the host. As-fabricated ZnS:Eu NPs exhibited typical red emission due to the transition of the Eu dopant in the 5d0-7f1, 5d0-7f2, 5d0-7f3, and 5d0-7f4 energy levels of the 4f orbital of the dopant. The typical diamagnetic ZnS could be converted to tunable paramagnetic as a function of Eu-doping content. These NPs were quantified for hydrogen evolution through water splitting by artificial solar spectrum. Eu doping can drastically enhance the hydrogen (H2) evolution capability of ZnS, which is higher than that of bare ZnS NPs. The causes behind these engrossing results will be revealed. These interesting properties may find applications in optoelectronics, spintronics, and H2 evolution.
페다티물라 푸네타(Peddathimula Puneetha),시바 프라탭 레디 말렘(Siva Pratap Reddy Mallem),이정희(Jung-Hee Lee),심재술(Jaesool Shim) 대한기계학회 2021 대한기계학회 춘추학술대회 Vol.2021 No.4
Recently, health-monitoring and wearable human-machine electronic devices have been receiving significant amount of attention. This means that these devices are possible to bending allowing free contacts to and conformal deformation on human skin and internal organs under physical/chemical changes. Current switching, which use change in current measurement data, is considered as one of the potential candidate for the next-generation sensing technology. The Schottky nano-junction that generally exhibits switching behavior may useful for switching sensors. GaN is an important optoelectronic wurtzite semiconductor material. GaN shows good mechanical performance and chemical stability even at higher temperatures. In addition, carbon-tape has high electrical/thermal conductivities, super-elastic mechanical properties. Especially, flexible GaN/carbon-tape, a dual-material that exhibits piezo-electrical properties, is likely a good candidate for fabricating Schottky nano-junction-based switching sensors.