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- 저자 : SiCong Zhang (검색결과 2 건)
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Wei Han,JianDong Mi,SiCong Zhang,Jun Xu,BinYu Qin 한국유체기계학회 2021 International journal of fluid machinery and syste Vol.14 No.4
For water-jet propellers, the geometry size of the guide vane change can effectively improve the performance of the pump. If other parameters remain unchanged, CFD numerical simulation of the guide vane number and wrap angle of the change can be used to effectively adjust the operation conditions of the pump. The relationship between the changes in pump head, pump efficiency, and water-jet propeller propulsive efficiency can be used, to find the best guide vane parameters to achieve the highest thrust efficiency. The calculation results show that an increase in the guide vane number coefficient and wrap angle coefficient will reduce size of the pump head. Meanwhile, an increase in the wrap angle coefficient and the guide vane number coefficient will reduce the propulsive efficiency of the whole water-jet propeller. In this experiment, it was found that the propulsion effect is best when the guide vane number coefficient remains unchanged and the wrap angle coefficient is 1.
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Formation of Ohmic contacts on laser irradiated n-type 6H-SiC without thermal annealing
Yan Wu,Lingfei Ji,Zhenyuan Lin,Minghui Hong,Sicong Wang,Yongzhe Zhang 한국물리학회 2019 Current Applied Physics Vol.19 No.4
In this work, KrF excimer laser irradiation of n-type SiC is used to form Ohmic contacts at the interfaces between the irradiated SiC and various types of metals with different work functions without subsequent thermal annealing. Ohmic contacts are formed between laser-treated 6H-SiC and Ti at a laser fluence of 0.7 J/cm2. Moreover, in the fluence range of 0.7–1.3 J/cm2, Ohmic characteristics are also observed between irradiated 6HSiC and Au, which is a representative inert metal. The laser-induced heavy doping effect reduces the thickness of the Schottky barrier between the metal and SiC, and the formation of graphene sheets on the irradiated SiC surface reduces the barrier height, resulting in the direct formation of Ohmic contacts. Our findings thus demonstrate the potential of this laser treatment method to achieve Ohmic contacts between n-type SiC and a broad range of metal electrodes without requiring high-temperature annealing.
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