http://chineseinput.net/에서 pinyin(병음)방식으로 중국어를 변환할 수 있습니다.
변환된 중국어를 복사하여 사용하시면 됩니다.
- 中文 을 입력하시려면 zhongwen을 입력하시고 space를누르시면됩니다.
- 北京 을 입력하시려면 beijing을 입력하시고 space를 누르시면 됩니다.
RISS 인기검색어
- 검색키워드
- 저자 : Shoou-Jinn Chang (검색결과 6 건)
- 무료
- 기관 내 무료
- 유료
-
Two-Dimensional ZnO Nanowalls for Gas Sensor and Photoelectrochemical Applications
Sheng-Po Chang,Chen-Hua Wen,Shoou-Jinn Chang 대한금속·재료학회 2014 ELECTRONIC MATERIALS LETTERS Vol.10 No.4
Zinc oxide (ZnO) nanowalls were vertically grown on a glass substrate through a fast, low-temperature, catalystfree process in a tube furnace. The morphology and microstructure of ZnO nanowalls were characterized by field-emission scanning electron microscopy, x-ray diffraction analysis, transmission electron microscopy, and photoluminescence measurements. The ZnO nanowall films showed strong UV emission and preferential c-axis orientation, with a hexagonal structure. Potential applications of the ZnO nanowalls were further investigated through experiments. The sensitivity of ZnO-based carbon monoxide gas sensors increased with increasing temperature and reached a maximum value at 300°C. In photoelectrochemical experiments, direct photoelectrolysis of water to generate hydrogen was performed using the ZnO nanowalls as the working photoelectrode. For an external bias of 1.2 V, the photocurrent densities reached 0.037 A/cm2 under Xe lamp illumination.
-
Synthesis and optical properties of ZnO thin films prepared by SILAR method with ethylene glycol
Lee, Pay-Yu,Chang, Sheng-Po,Chang, Shoou-Jinn Techno-Press 2013 Advances in nano research Vol.1 No.2
An ultrasonic-mediated assisted stepwise method has been developed for depositing transparent ZnO films from aqueous solution. Rinsing in low ethylene glycol temperature was easy to produce intermediate phase of $Zn(OH)_2$, rinsing in $120^{\circ}C$ ethylene glycol was observed the diffraction peak of intermediate $Zn(OH)_2$ in early report, the rinsing temperature plays an important role in the process of $Zn(OH)_2$ phase transformed to ZnO, high rinsing temperature actually improved the intermediate phase. However, the effect of rinsing on the intermediate phase is yet to be understood clearly. The effect of different rinsing procedures, involving either of or a combination of successive ionic layer adsorption and reaction (SILAR) and ultrasonic-assisted rinsing, prior to hydrolysis in ethylene glycol was found to improve the occurrence $Zn(OH)_2$ in ZnO thin films. In the zinc complex ($[Zn(NH_3)_4]^{2+}$) solution, excess ($[Zn(NH_3)_4]^{2+}$) absorbed in glass substrate transformed incompletely to ZnO and exist as $Zn(OH)_2$ phase in thin films. In films deposited at low temperature, rinsing procedure is applied to improve excess $Zn(OH)_2$ and obtain smoother transparent thin films.
-
Investigation of Zinc-Tin-Oxide Thin-Film Transistors with Varying SnO2 Contents
Po-Jui Kuo,Sheng-Po Chang,Shoou-Jinn Chang 대한금속·재료학회 2014 ELECTRONIC MATERIALS LETTERS Vol.10 No.1
Zinc tin oxide (ZTO) thin-film transistors (TFTs) were prepared on a glass substrate by deposition using radio frequency (RF) magnetron co-sputtering, followed by annealing at 300°C for 20 min. The properties of ZTO thin films were found to be dependent on the atomic compositional ratio of Zn:Sn; the device performance and operational stability of the fabricated ZTO TFTs, including the mobility, on-off current ratio, threshold voltage, and subthreshold slope, were strongly influenced by the Sn content. Better TFT performance was achieved when the Sn content in the ZTO thin film was low, and the optimal mobility was 18 cm2 V−1 s−1, threshold voltage was 0.5 V, and subthreshold slope was 0.227 V·dec−1. Notably, the device performance and operational stability of the RF magnetron co-sputtered ZTO TFTs could be improved by optimizing the Zn:Sn atomic compositional ratio in the films.
-
Improved high-k stacks with chemical oxide interfacial layer by DPN/ PNA treatment
Shuguang Li,Ying-Tsung Chen,Shoou-Jinn Chang 한국물리학회 2015 Current Applied Physics Vol.15 No.3
A decoupled plasma nitridation (DPN) with post nitridation annealing (PNA) treatment method was introduced to improve the performances of MOS devices with high-k (HK)-last/gate-last integration scheme and chemical oxide interface layer (IL). By introducing N to form HfSiON, it was found that DPN + PNA treatments could provide smaller equivalent oxide thickness (EOT) for both nMOS and pMOS devices. It was also found that we could achieve the best overall device performance for the HK-last/gatelast integration scheme with a chemical oxide IL by introducing nitrogen gas with low percentage content during DPN followed by high temperature PNA.
-
Embedded-Ge source and drain in InGaAs/GaAs dual channel MESFET
Shang-Chao Hung,Qiuping Luan,Hau-Yu Lin,Shuguang Li,Shoou-Jinn Chang 한국물리학회 2013 Current Applied Physics Vol.13 No.8
We report the first demonstration of n-type IIIeV metal-semiconductor field-effect transistors (nMESFETs) with IV group material hetero-junction source and drain (S/D) technology. A selective epitaxial growth of germanium (Ge) in the recessed gallium arsenide (GaAs) S/D regions is successfully developed using ultra-high vacuum chemical vapor deposition (UHVCVD) system. The dual channel structure includes an additional 10-nm higher mobility n-In0.2Ga0.8As layer on n-GaAs channel and is introduced to further improve the device performance. The n-MESFET, combining embedded-Ge S/D with In0.2Ga0.8As/GaAs channel, exhibits good transfer properties with a drain current on/off ratio of approximately 103. Due to the small barrier height of Ti/In0.2Ga0.8As Schottky contact, a lattice-matched wide bandgap In0.49Ga0.51P dielectric layer is also integrated into the device architecture to build a higher electron Schottky barrier height (SBH) for gate leakage current reduction. The Ti/In0.49Ga0.51P/n-In0.2Ga0.8As Schottky diode shows a comparable leakage level to Ti/n-GaAs with 2 x 10-2 A/cm2 at a gate voltage of -2.0 V.
-
A Novel Transparent Microwave Thin Film Coating Technique Applied to Dual‑Band Antennas
Yu-Ming Lin,Hung-Wei Wu,Yung-Wei Chen,Cheng-Yuan Hung,Shoou-Jinn Chang,Yan-Kuin Su 대한금속·재료학회 2019 ELECTRONIC MATERIALS LETTERS Vol.15 No.6
In this paper, we propose a novel transparent microwave thin film coating technique and discuss its application in planardual-band antennas (0.9/5.55 GHz). We developed a new process for activating the nano-alignment thin film from high tolow resistivity (from 1.96 to 1.29 × 10−4 Ω cm) and from partial to full transparency (from 55 to 83% transmittance) within150 s. The platform of the activation process comprises a periodic electrode, an optical microscope, and an alternating currentsignal generator. The periodic electrode can effectively rearrange the nano-alignment thin film into an ordered arrangement,which enhances the properties of the thin film in the microwave frequency range. A high-transparency and low-resistivitydual-band antenna is designed and fabricated using the proposed microwave thin film coating technique. The dual-bandantenna has operating bandwidths of 740–960 and 5030–7030 MHz and potential applications in transparent electronicssuch as wearable devices and intelligent cars.
연관 검색어 추천
이 검색어로 많이 본 자료
활용도 높은 자료
