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- 저자 : Shengjin Yuan (검색결과 1 건)
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Back-channel-etched InGaZnO thin-film transistors with Au nanoparticles on the back channel surface
Peng Xiao,Wenfeng Wang,Yingyi Ye,Ting Dong,Shengjin Yuan,Jiaxing Deng,Li Zhang,Jianwen Chen,Jian Yuan 대한금속·재료학회 2020 ELECTRONIC MATERIALS LETTERS Vol.16 No.2
In this paper, Au nanoparticles (NPs) were introduced on the surface of oxide thin fi lm to enhance the etching resistance of thethin fi lm, and back-channel-etched (BCE) InGaZnO (IGZO) thin fi lm transistors (TFTs) with Au NPs on the back channel surfacewere successfully fabricated. Detailed studies showed that the etching resistance of IGZO thin fi lms was enhanced signifi cantly byintroducing Au NPs on IGZO thin fi lms, and the etching resistance was enhanced with the increase of Au NPs thickness. Furthermore,Au NPs deposited by vaccum evaporation were uniformly dispersed on the IGZO surface other than forming a continuousthin fi lm. By introducing the Au NPs on the IGZO surface, we successfully patterned the S/D electrodes on Au NPs/IGZO andfabricated BCE TFTs. The IGZO-TFTs with 5-nm-thick Au NPs on the back channel surface exhibited excellent electrical characteristicwith a μ sat of 9.9 cm 2 /V s, a SS of 0.26 V/decade, a V on of 0.23 V, an I on/off of 10 6 and an off -state current of 10 −11 A. Inaddition, the introduction of Au NPs did not lead to an increase in the off -state current, which was mainly ascribed to the Schottkybarrier between Au NPs and IGZO due to the high work function of Au. It is a universal method to fabricate BCE TFTs with highelectrical performance, because it was not limited to the types of oxide materials and had no special requirements for equipment.
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