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Patole, Shashikant P,Shin, Dong Wook,Fugetsu, Bunshi,Yoo, Ji-Beom American Scientific Publishers 2013 Journal of Nanoscience and Nanotechnology Vol.13 No.11
<P>Transparent conducting films (TCF) made up from carbon nanotubes (CNTs) have a tremendous potential in replacing the indium tin oxide films. Compare to single wall CNTs multiwall CNTs are more metallic and are more suitable candidate for the TCF. In this letter we report the use of selectively grown mm-scale, few-wall, vertically aligned CNTs for the fabrication of TCF. Water-assisted chemical vapor deposition was used to grow the mm-scale CNTs within short growth time. A special post-growth water-vapor treatment allowed us to remove the catalyst-free CNT forest very easily from the substrate and use it for the further process. A filtration-wet transfer process was used to form the TCF. The TCF shows sheet resistance of 228 omega/sq. at 72% transparency (at 550 nm). The ratio of optical conductivity to dc conductivity was observed in between 0.21 to 0.25 for below 80% transmission.</P>
Menamparambath, Mini Mol,Park, Jong-Ho,Yoo, Ho-Sung,Patole, Shashikant P,Yoo, Ji-Beom,Kim, Sung Wng,Baik, Seunghyun RSC Pub 2014 Nanoscale Vol.6 No.15
<P>A difference in work function plays a key role in charge transfer between two materials. Inorganic electrides provide a unique opportunity for electron transfer since interstitial anionic electrons result in a very low work function of 2.4-2.6 eV. Here we investigated charge transfer between two different types of electrides, [Ca(2)N](+)e(-) and [Ca(24)Al(28)O(64)](4+)4e(-), and single-walled carbon nanotubes (SWNTs) with a work function of 4.73-5.05 eV. [Ca(2)N](+) e(-) with open 2-dimensional electron layers was more effective in donating electrons to SWNTs than closed cage structured [Ca(24)Al(28)O(64)](4+) 4e(-) due to the higher electron concentration (1.3 10(22) cm(-3)) and mobility ( 200 cm(2) V(-1) s(-1) at RT). A non-covalent conjugation enhanced near-infrared fluorescence of SWNTs as high as 52%. The field emission current density of electride-SWNT-silver paste dramatically increased by a factor of 46,000 (14.8 mA cm(-2)) at 2 V μm(-1) (3.5 wt% [Ca(2)N](+) e(-)) with a turn-on voltage of 0.85 V μm(-1).</P>
Lee, Jae-Hyun,Choi, Soon-Hyung,Patole, Shashikant P.,Jang, Yamujin,Heo, Keun,Joo, Won-Jae,Yoo, Ji-Beom,Hwang, Sung Woo,Whang, Dongmok American Chemical Society 2014 ACS APPLIED MATERIALS & INTERFACES Vol.6 No.7
<P>We synthesized thermally stable graphene-covered Ge (Ge@G) nanowires and applied them in field emission devices. Vertically aligned Ge@G nanowires were prepared by sequential growth of the Ge nanowires and graphene shells in a single chamber. As a result of the thermal treatment experiments, Ge@G nanowires were much more stable than pure Ge nanowires, maintaining their shape at high temperatures up to 850 °C. In addition, field emission devices based on the Ge@G nanowires clearly exhibited enhanced thermal reliability. Moreover, field emission characteristics yielded the highest field enhancement factor (∼2298) yet reported for this type of device, and also had low turn-on voltage. Our proposed approach for the application of graphene as a protective layer for a semiconductor nanowire is an efficient way to enhance the thermal reliability of nanomaterials.</P><P><B>Graphic Abstract</B> <IMG SRC='http://pubs.acs.org/appl/literatum/publisher/achs/journals/content/aamick/2014/aamick.2014.6.issue-7/am5001294/production/images/medium/am-2014-001294_0004.gif'></P><P><A href='http://pubs.acs.org/doi/suppl/10.1021/am5001294'>ACS Electronic Supporting Info</A></P>
Synthesis and Characterization of a Novel Laser Ablation Sensitive Triazene Incorporated Epoxy Resin
Archana S. Patole,Jeong-min Hyeon,Jung-Mn Hyun,김태호,Shashikant P. Patole,Dae-Jo Hong,Chang-Bo Lee,Cheol-Ho Choi 대한금속·재료학회 2014 ELECTRONIC MATERIALS LETTERS Vol.10 No.1
New triazene monomer was synthesized and further employed as a crosslinking agent partner with epoxy matrix using ethyl methyl imidazole as a curing agent in order to investigate the effect of triazene moieties on polymeric properties for laser ablation application. The synthesized triazene monomer was characterized by analytical and spectroscopic methods, while the surface morphology of resist after laser ablation was visualized by optical laser scanning images and scanning electron microscopy. Thermogravimetrical investigations indicate the loss of nitrogen being the initial thermal decomposition step and exhibit sufficient stabilities for the requirements for laser ablation application. Fourier transform infra-red, nuclear magnetic resonance, and gas chromatography analyses showed the successful synthesis of triazene. The ablation results from the optical laser scanning images revealed that the etching depth could be controlled by varying the concentration of triazene monomer in the formulation of epoxy. The shear strength analysis revealed that that the shear strength increased with increasing the amount of triazene in the formulation of direct ablation sensitive resist.
Sadhu Kolekar,Shashikant P. Patole,Ji‑Beom Yoo,Chandrakant V. Dharmadhikari 대한금속·재료학회 2018 ELECTRONIC MATERIALS LETTERS Vol.14 No.2
Field emission from nanostructured films is known to be dominated by only small number of localized spots which varieswith the voltage, electric field and heat treatment. It is important to develop processing methods which will produce stableand uniform emitting sites. In this paper we report a novel approach which involves analysis of Proximity Field EmissionMicroscopic (PFEM) images using Scanning Probe Image Processing technique. Vertically aligned carbon nanotube emittershave been deposited on tungsten foil by water assisted chemical vapor deposition. Prior to the field electron emission studies,these films were characterized by scanning electron microscopy, transmission electron microscopy, and Atomic ForceMicroscopy (AFM). AFM images of the samples show bristle like structure, the size of bristle varying from 80 to 300 nm. The topography images were found to exhibit strong correlation with current images. Current–Voltage (I–V) measurementsboth from Scanning Tunneling Microscopy and Conducting-AFM mode suggest that electron transport mechanism in imagingvertically grown CNTs is ballistic rather than usual tunneling or field emission with a junction resistance of ~10 kΩ. It wasfound that I–V curves for field emission mode in PFEM geometry vary initially with number of I–V cycles until reproducibleI–V curves are obtained. Even for reasonably stable I–V behavior the number of spots was found to increase with the voltageleading to a modified Fowler–Nordheim (F–N) behavior. A plot of ln(I/V3) versus 1/V was found to be linear. Currentversus time data exhibit large fluctuation with the power spectral density obeying 1/f2 law. It is suggested that an analogueof F–N equation of the form ln(I/Vα) versus 1/V may be used for the analysis of field emission data, where α may depend onnanostructure configuration and can be determined from the dependence of emitting spots on the voltage.
Deposition of Cu2ZnSnS4 Thin Films by Magnetron Sputtering and Subsequent Sulphurization
Arun Khalkar,임광수,유성만,Shashikant P. Patole,유지범 대한금속·재료학회 2014 ELECTRONIC MATERIALS LETTERS Vol.10 No.1
Top-down magnetron sputtering with subsequent, separate sulphurization was used to deposit Cu2ZnSnS4 (CZTS) absorber layers for solar cells. Cu, ZnS and SnS targets were used to deposit the absorber layers onto soda lime glass substrates. The sputtering system was first calibrated for individual Cu, ZnS and SnS deposition. CZTS thin film was then deposited by co-sputtering followed by annealing at 530°C in sulphurous conditions at atmospheric pressure for 30 minutes. Scanning electron microscopy, x-ray diffraction, Raman and UV-visible absorption spectroscopy were used to characterize the absorber film. It was found to have properties potentially suitable for use in high-efficiency solar cells. These include phonon peaks corresponding to quaternary CZTS, a high absorption coefficient of 1.1 × 105 c m−1, a direct optical band gap of 1.5 eV, a kesterite CZTS phase and stoichiometric ratios of Cu/[Zn+Sn] = 0.82 and Zn/Sn = 1.19.
Seong Man Yu,Jin Hyoung Yoo,Shashikant P. Patole,Jong Hak Lee,Ji-Beom Yoo 대한금속·재료학회 2012 ELECTRONIC MATERIALS LETTERS Vol.8 No.3
This study examined the effect of the growth parameters on the characteristics of polycrystalline In2Se3 (IS)films using metal organic chemical vapor deposition. Trimethylindium and ditertiarybutylselenide metal organic compounds were used as the indium and selenium sources to deposit the IS films on soda lime glass. The effect of the growth pressure was examined from 10 to 80 torr. The effect of the growth temperature was studied in the range, 300°C to 500°C. Scanning electron microscopy and high resolution x-ray diffraction was used to analyze the morphological and structural properties of the deposited films. Optical absorption was used to examine the optical properties and band gap of the deposited IS films. The details of the analysis are presented.