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One Million Percent Tunnel Magnetoresistance in a Magnetic van der Waals Heterostructure
Kim, Hyun Ho,Yang, Bowen,Patel, Tarun,Sfigakis, Francois,Li, Chenghe,Tian, Shangjie,Lei, Hechang,Tsen, Adam W. American Chemical Society 2018 NANO LETTERS Vol.18 No.8
<P>We report the observation of a very large negative magnetoresistance effect in a van der Waals tunnel junction incorporating a thin magnetic semiconductor, CrI<SUB>3</SUB>, as the active layer. At constant voltage bias, current increases by nearly one million percent upon application of a 2 T field. The effect arises from a change between antiparallel to parallel alignment of spins across the different CrI<SUB>3</SUB> layers. Our results elucidate the nature of the magnetic state in ultrathin CrI<SUB>3</SUB> and present new opportunities for spintronics based on two-dimensional materials.</P> [FIG OMISSION]</BR>
Controlled electroplating and electromigration in nickel electrodes for nanogap formation
Los Santos Valladares, Luis De,Leon Felix, Lizbet,Bustamante Dominguez, Angel,Mitrelias, Thanos,Sfigakis, Francois,Khondaker, Saiful I,Barnes, Crispin H W,Majima, Yutaka IOP Pub 2010 Nanotechnology Vol.21 No.44
<P>We report the fabrication of nickel nanospaced electrodes by electroplating and electromigration for nanoelectronic devices. Using a conventional electrochemical cell, nanogaps can be obtained by controlling the plating time alone and after a careful optimization of electrodeposition parameters such as electrolyte bath, applied potential, cleaning, etc. During the process, the gap width decreases exponentially with time until the electrode gaps are completely bridged. Once the bridge is formed, the <I>ex situ</I> electromigration technique can reopen the nanogap. When the gap is ∼ 1 nm, tunneling current–voltage characterization shows asymmetry which can be corrected by an external magnetic field. This suggests that charge transfer in the nickel electrodes depends on the orientation of magnetic moments. </P>