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Compliant Thermoelectric Generators Toward Self-Powered Flexible Electronics
Seungjun Chung(정승준) 한국고분자학회 2021 한국고분자학회 학술대회 연구논문 초록집 Vol.46 No.2
Softening of thermoelectric generators (TEGs) allows conformal contact with arbitrary-shaped heat sources, which offers an opportunity to realize self-powered flexible applications. However, existing flexible thermoelectric devices inevitably exhibit reduced thermoelectric conversion efficiency due to the parasitic heat loss in high-thermal-impedance polymer substrates and poor thermal contact arising from rigid interconnects. In this talk, I would like to introduce various state of the art flexible thermoelectrics for self-powered applications. In particular, our recent efforts to improve the thermoelectric performance of compliant organic/inorganic TEGs will be highlighted which facilitate to achieve high energy conversion efficiency in TEGs capable of conforming to 3D surfaces of heat sources simultaneously.
정승준(Seungjun Chung),이재현(Jae-Hyun Lee),김장주(Jang-Joo Kim),홍용택(Yongtaek Hong) 대한전자공학회 2007 대한전자공학회 학술대회 Vol.2007 No.11
We report properties and bias-temperature-stress (BTS) stability of the planarized stainless steel (SS) foil substrates and their application to top-emission organic light-emitting diodes (TEOLEDs). We used benzocyclobutene (BCB) for planarization material. After applying BCB layer on the SS foil substrate, we successfully reduced the surface roughness from 60±20(RMS)㎚ to 1.2±0.4(RMS)㎚, which was measured by an atomic force microscope (AFM) method. The BCB layer showed a good BTS stability when we performed the BTS test by applying 80V across the BCB layer at 80℃. Capacitance and leakage current for the BCB layer was changed to 1.11㎋/㎠ and 207.2㎩/㎠ from its original values of 1.03㎋/㎠ and 64.5㎩/㎠, respectively, after 3hours BTS test We fabricated TEOLED on the BCB-planarized SS foil substrate am compared its performance with the TEOLED fabricated on a silicon substrate. Although the surface roughness of the planarized BCB SS foil substrate was higher than that of the silicon substrate (0.145±0.324㎚, RMS), we obtained similar performance of 2000㏅/㎡ luminance at 0.3㎃/㎠ (6.5V) and operation stability of 130 hours of half-luminance lifetime, from both devices