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Lee, H. G,P. Y. Lee,Y. K. Lee,S. J. Kim,H. K. Chung,M. K. Seo,J. K. Park,K. S. Min,W. K. Chang 한국동물생명공학회(구 한국동물번식학회) 2003 Reproductive & developmental biology Vol.27 No.4
The effects of additions/deletions in glycosylated residues of recombinant human EPO (rhEPO) produced in CHO-K1 on their secretion were examined. hEPO cDNA was amplified from human liver mRNA and cloned into the pCR2.1 TOPO. Using overlapping-extension site-directed mutagenesis method, glycosylation sites at 24th, 38th, 83rd, and 126th were respectively or accumulatively removed by substituting its asparagine (or serine) with glutamine. To add novel glycosylation sites, 69 and 105th leucine was mutated to asparagine. Mutant and wild type rhEPO constructs were cloned into the pcDNA3 expression vector with CMV promoter and transfected into CHO cell line, CHO-K1, to produce mutant rhEPO mutant rhEPO proteins. Enzyme-linked immunosorbant assay (ELISA) and Western analysis with monoclonal anti-EPO antibody were performed using supernatants of the cultures showing transient and stable expressions respectively. Addition of novel glycosylation reduced rhEPO secretion dramatically while deletion mutants had little effect except some double deletion mutants (△24/83 and △38/83) and triple mutant (△24/38/83). This fact suggests that not single but combination of changes in glycosyl groups affect secretion of rhEPO in cell culture, possibly via changes in their conformations.
Synthesis and Thermoelectric Properties of Ce1−z Pr z Fe4−x Co x Sb12 Skutterudites
Song, K. M.,Shin, D. K.,Jang, K. W.,Choi, S. M.,Lee, S.,Seo, W. S.,Kim, I. H. Springer Science + Business Media 2017 Journal of electronic materials Vol.46 No.5
<P>p-Type Ce1-z Pr (z) Fe4-x Co (x) Sb-12 skutterudites were prepared by encapsulated melting, quenching, annealing, and hot pressing. While the skutterudite phase was successfully synthesized, a small amount of the secondary phase (FeSb2) was observed. According to the scanning electron microscope analysis, (Ce,Pr)Sb-2 phases were also observed for Co-substituted specimens (x = 0.5). The electrical conductivity decreased with increasing temperature, implying a degenerate semiconductor behavior, and also decreased with increasing Co contents. All specimens showed p-type characteristics having positive signs of the Hall coefficient and the Seebeck coefficient. The Seebeck coefficient increased with increasing temperature and reached a maximum value at 823 K. The power factor (PF) increased with decreasing Co content and Ce0.75Pr0.25 Fe4Sb12 showed a peak value of PF = 3.2 mW m(-1) K-2 at 823 K. The electronic thermal conductivity decreased with increasing Co contents and the lattice thermal conductivity decreased with decreasing Ce and Co contents at high temperature. The thermal conductivity increased at temperatures above 623 K due to bipolar conduction. The dimensionless figurea of pound merit (ZT) showed a maximum value of ZT = 0.84 at 823 K for Ce0.25Pr0.75Fe4Sb12.</P>
W-band divide-by-3 frequency divider using 0.1 μm InAlAs/InGaAs metamorphic HEMT technology
Jeong, J.,Kim, S.,Choi, W.,Noh, H.,Lee, K.,Seo, K.-S.,Kwon, Y. IEE 2005 Electronics letters Vol.41 No.18
A W-band divide-by-3 frequency divider with wide bandwidth and low power dissipation is presented using harmonic injection-locking technique. A cascode FET is employed for a self-oscillating second-harmonic mixer which is injection-locked by third-harmonic input to obtain the division order of three. The fabricated frequency divider using 0.1 μm GaAs metamorphic HEMT technology shows superior performance such as large bandwidth of 6.1 GHz around 83.1 GHz (7.3%) under small DC power consumption of 12 mW.
Cu 기판위에 성장한 MgO, MgAl₂O₄와 MgAl₂O₄/MgO 박막의 집속이온빔을 이용한 스퍼터링수율 측정과 이차전자방출계수 측정
정강원(K. W. Jung),이혜정(H. J. Lee),정원희(W. H. Jung),오현주(H. J. Oh),박철우(C. W. Park),최은하(E. H. Choi),서윤호(Y. H. Seo),강승언(S. O. Kang) 한국진공학회(ASCT) 2006 Applied Science and Convergence Technology Vol.15 No.4
MgAl₂O₄ 막은 MgO 보호막 보다 단단하며 수분 흡착 오염문제에 상당히 강한 특성을 가진다. 본 연구에서 AC-PDP의 유전체보호막으로 사용되는 MgO 보호막의 특성을 개선하기 위해 MgAl₂O₄/MgO 이중층 보호막을 제작하여 특성을 조사하였다. 전자빔 증착기를 사용하여 Cu 기판에 MgO와 MgAl₂O₄을 각각 1000 Å 두께로 증착, MgAl₂O₄/MgO을 200/800 Å 두께로 적층 증착 후, 이온빔에 의한 충전현상을 제거하기 위해 Al을 1000 Å 두께로 증착하였다. 집속 이온빔(focused ion beam ; FIB)장치를 이용하여 10 ㎸에서 14 ㎸까지 이온빔 에너지에 따라 MgO는 0.364 ~ 0.449 값의 스퍼터링 수율에서 MgAl₂O₄/MgO을 적층함으로 24 ~ 30 % 낮아진 0.244 ~ 0.357 값의 스퍼터링 수율이 측정되었으며, MgAl₂O₄는 가장 낮은 0.088 ~ 0.109 값의 스퍼터링 수율이 측정되었다. g-집속이온빔(g-FIB)장치를 이용하여 Ne? 이온 에너지를 50 V에서 200 V까지 변화 시켜 MgAl₂O₄/MgO와 MgO는 0.09 ~ 0.12의 비슷한 이차전자방출 계수를 측정 하였다. AC-PDP셀의 72시간 열화실험 후 SEM 및 AFM으로 열화된 보호막의 표면을 관찰하여 기존의 단일 MgO 보호막과 MgAl₂O₄/MgO의 적층보호막의 열화특성을 살펴보았다. It is known that MgAl₂O₄ has higher resistance to moisture than MgO, in humid ambient MgO is chemically unstable. It reacts very easily with moisture in the air. In this study, the characteristic of MgAl₂O₄ and MgAl₂O₄/MgO layers as dielectric protection layers for AC-PDP (Plasma Display Panel) have been investigated and analysed in comparison for conventional MgO layers. MgO and MgAl₂O₄ films both with a thickness of 1000 Å and MgAl₂O₄/MgO film with a thickness of 200/800 Å were grown on the Cu substrates using the electron beam evaporation. 1000 Å thick aluminium layers were deposited on the protective layes in order to avoid the charging effect of Ga? ion beam while the focused ion beam(FIB)is being used. We obtained sputtering yieds for the MgO, MgAl₂O₄ and MgAl₂O₄/MgO films using the FIB system. MgAl₂O₄/MgO protective layers have been found th show 24 ~ 30% lower sputtering yield values from 0.244 up to 0.357 than MgO layers with the values from 0.364 up to 0.449 for irradiated Ga? ion beam with energies ranged from 10 ㎸ to 14 ㎸. And MgAl₂O₄ layers have been found to show lowest sputtering yield values from 0.88 up to 0.109. Secondary electron emission coefficient(g) using the γ-FIB. MgAl₂O₄/MgO and MgO have been found to have similar g values from 0.09 up to 0.12 for indicated Ne+ ion with energies ranged from 50 V to 200 V. Observed images for the surfaces of MgO and MgAl₂O₄/MgO protective layers, after discharge degradation process for 72 hours by SEM and AFM. It is found that MgAl₂O₄/MgO protective layer has superior hardness and degradation resistance properties to MgO protective layer.
R2R 공정을 이용한 마이크로 Cavity 성형에서 Roll의 변형에 대한 연구
민병욱(B.W. Min),서원상(W.S. Seo),김종봉(J.B. Kim),송정한(J.H. Song),박근(K. Park) 한국생산제조학회 2011 한국생산제조시스템학회 학술발표대회 논문집 Vol.2011 No.4
R2R 공정을 이용한 마이크로 Cavity의 성형에 대해 유한요소법을 이용하여 해석적으로 연구하였다. R2R 공정으로 마이크로 Cavity를 성형할 때 발생할 수 있는 불량 요인으로는 크랙, 주름, 그리고 형상오차 등이 있다. 크랙 및 주름에 대해서는 기존에 이미 연구 결과를 통해 발표하였고, 본 연구에서는 롤의 변형에 의한 형상오차를 분석하였다. 성형해석을 통해 성형 하중을 구하고, 그 하중을 롤에 가하여 롤의 변형을 해석하였다. 롤의 변형이 무시할 수 없을 정도로 큰 것으로 판단이 되어 개선안의 마련이 필요하다고 판단된다.