기업 내 구성원의 개인-조직 가치일치성과 목표일치성이 업무열의에 미치는 영향: 상사지원인식의 조절효과

서승호 ( Seo¸ Seungho ),김준희 ( Kim¸ Junhee ) 한국인력개발학회 2020 HRD연구 Vol.22 No.4

본 연구의 목적은 구성원의 개인-조직 가치일치성, 개인-조직 목표일치성, 상사지원인식, 업무열의 간 관계를 규명하는 것이다. 연구목적을 달성하기 위해서 수도권 중소기업이나 대기업에 근무하는 직장인들로부터 수집된 327부의 설문자료가 분석에 사용되었다. 확인적 요인분석과 위계적 회귀분석 등의 분석방법을 활용하였다. 연구결과는 첫째, 개인-조직 가치일치성과 개인-조직 목표일치성이 업무열의에 정(+)적인 영향을 미치는 것으로 나타났다. 둘째, 업무열의에 대한 개인-조직 가치일치성의 영향력이 개인-조직 목표일치성의 영향력보다 큰 것으로 밝혀졌다. 셋째, 개인-조직 가치일치성과 업무열의의 관계에서 상사지원인식의 조절효과는 없었다. 넷째, 개인-조직 목표일치성과 업무열의 간 관계에서 상사지원인식의 조절효과가 정(+)적인 것으로 밝혀졌다. 본 연구의 결과를 토대로 HRD 관점에서 기업 구성원의 업무열의를 높이기 위한 실천적 측면, 향후 연구 측면, 이론적 측면에서 시사점을 제시하였다. The purpose of the current study was to examine the relationships among employees' person-organization value congruence, person-organization goal congruence, perceived supervisor support, and work engagement. To achieve the research goal, we used quantitative data collected from 327 employees working for a small and medium-sized enterprise or large company in the Seoul Capital Area of South Korea. We performed a confirmatory factor analysis and hierarchical regression analysis to analyze the data. As a result, we found followings: (1) the employees' person-organization value congruence and person-organization goal congruence had positive impacts on work engagement; (2) the impact of employees' person-organization value congruence on work engagement was greater than that of person-organization goal congruence; (3) the employees' perceived supervisor support did not moderate the relationship between person-organization value congruence and work engagement; and (4) the employees' perceived supervisor support had a positive moderation effect on the relationship between person-organization goal congruence and work engagement. Based on the results, we provided implications for practice, research, and theory building in the work engagement area for the HRD field.

High Accuracy Concentration Analysis of Accelerator Components in Acidic Cu Superfilling Bath

Choe, Seunghoe,Kim, Myung Jun,Kim, Kwang Hwan,Kim, Hoe Chul,Jeon, Yongkeun,Kim, Tae Young,Kim, Soo-Kil,Kim, Jae Jeong The Electrochemical Society 2016 Journal of the Electrochemical Society Vol.163 No.2

<P>We have devised a modified cyclic voltammetry stripping (CVS) method to measure the concentrations of bis-(sulfopropyl) disulfide (SPS) and 3-mercapto-1-propane sulfonate (MPS) in Cu plating solutions. Though MPS, a breakdown product of SPS, enhances the Cu deposition rate on flat electrodes, it is not a superfilling-capable accelerator for the damascene structure, unlike SPS. Therefore, accurate measurement of SPS in damascene Cu plating baths is important. However, enhancement of the Cu deposition rate by MPS interferes with the electrochemical signal of SPS, leading to a significant error when using the modified linear approximation technique (MLAT)-CVS analysis method. To evaluate their concentrations individually, a two-step CVS analysis was performed in which the total accelerator concentration ([SPS] + 1/2[MPS]) and conversion ratio were separately determined. All MPS species in the bath were oxidized to SPS by controlling the plating solution pH. Subsequent MLAT-CVS analysis successfully revealed the total accelerator concentration in the Cu plating solution. Individual SPS and MPS concentrations were thereby calculated using the conversion ratio evaluated from the difference in their relative accelerating abilities. This modified method enabled determination of the SPS concentration with <10% error, suggesting a reliable and high accuracy tool to predict pattern filling capabilities of plating solutions. (C) The Author(s) 2015. Published by ECS.</P>

An Investigation of Glyceollin I’s Inhibitory Effect on The Mammalian Adenylyl Cyclase

Dong-Chan Kim(김동찬),Nam Doo Kim(김남두),Sung In Kim(김성인),Chul-Soo Jang(장철수),Chang Oh Kweon(권창오),Byung Weon Kim(김병원),Jae-Ki Ryu(류재기),Hyun-kyung Kim(김현경),Suk Jun Lee(이석준),Seungho Lee(이승호),Dongjin Kim(김동진) 한국생명과학회 2013 생명과학회지 Vol.23 No.5

글리세올린 I 은 다양한 피부 질환의 예방과 치료에 유용한 물질로 주목을 받아왔다. 그러나 피부 멜라닌 형성에 결정적 역할을 담당하는 포유류의 아데니닐 고리화 효소(이하 mAC)에 대한 직접적인 결합 형태와 상호 작용에 대한 연구는 현재까지 연구 보고된 사례가 없었다. 글리세올린 I 의 mAC 활성 부위에 대한 결합 작용 기작을 규명하기 위하여 우선 글리세올린 I과 SQ22,536 (mAC에 결합하여 mAC의 활성을 억제하는 것으로 이미 잘 알려진 단일 화합 물질)의 mAC에 대한 결합 친화도와 결합 형태를 비교 분석 하였다. 글리세올린 I은 mAC의 활성부위에 존재하는 Asp 1018, Trp 1020, Asn 1025와 각각 3개의 수소결합을 형성하는 것으로 분석되었고 SQ22,536은 mAC 활성부위의 Asp 1018, Asn 1025와 2개의 수소결합을 형성하여 글리세올린 I이 상대적으로 우월하게 결합하는 것으로 분석되었다. 글리세올린 I은 또한 포스콜린(forskolin)에 의해서 유도되는 세포내 멜라닌 형성 2차 신호전달 물질인 cyclic AMP의 생성과 이로인해 유발되는 단백질 인산화 효소 A의 인산화를 효과적으로 억제하는 것을 멜라노마 세포 실험을 통하여 확인하였다. 또한 글리세올린 I 을 장시간 세포에 투여하여도 세포의 생존률에는 영향을 주지 않음을 확인하였다. 본 연구 통하여 규명된 글리세올린 I의 mAC 활성 억제 효능 및 멜라닌 생성 신호전달 기작을 조절하는 성질을 이용하여 향후 흑색종과 같은 다양한 피부 질환 치료제 개발 및 미백화장품 핵심 물질 개발에 활용될 수 있을 것으로 사료된다. Glyceollin I has gained attention as a useful therapy for various dermatological diseases. However, the binding property of glyceollin I to the mammalian adenylyl cyclase (hereafter mAC), a critical target enzyme for the down-regulation of skin melanogenesis, has not been fully explored. To clarify the action mechanism between glyceollin I and mAC, we first investigated the molecular docking property of glyceollin I to mAC and compared with that of SQ22,536, a well-known mAC inhibitor, to mAC. Glyceollin I showed superiority by forming three hydrogen bonds with Asp 1018, Trp 1020, and Asn 1025, which exist in the catalytic site of mAC. However, SQ22,536 formed only two hydrogen bonds with Asp 1018 and Asn 1025. Secondly, we confirmed that glyceollin I effectively inhibits the formation of forskolin-induced cAMP and the phosphorylation of PKA from a cell-based assay. Long term treatment with glyceollin I had little effect on the cell viability. The findings of the present study also suggest that glyceollin I may be extended to be used as an effective inhibitor of hyperpigmentation.

Effects of enzymatic treatment on the reduction of extracellular polymeric substances (EPS) from biofouled membranes

Kim, Lan Hee,Kim, Sung-Jo,Kim, Chang-Min,Shin, Myung Seop,Kook, Seungho,Kim, In S. Taylor Francis 2013 Desalination and Water Treatment Vol.51 No.31

TELEOPERATED MOBILE ROBOT FOR INSPECTION IN NUCLEAR FACILITIES

Seungho Kim,Changhoi Kim,Byungsoo Kim,Sukyeoung Hwang,Jongmin Lee 제어로봇시스템학회 1990 제어로봇시스템학회 국내학술대회 논문집 Vol.1990 No.10

Galvanostatic bottom-up filling of TSV-like trenches: Choline-based leveler containing two quaternary ammoniums

Kim, Myung Jun,Seo, Youngran,Kim, Hoe Chul,Lee, Yoonjae,Choe, Seunghoe,Kim, Young Gyu,Cho, Sung Ki,Kim, Jae Jeong Elsevier 2015 ELECTROCHIMICA ACTA Vol.163 No.-

<P><B>Abstract</B></P> <P>Through Silicon Via (TSV) technology is essential to accomplish 3-dimensional packaging of electronics. Hence, more reliable and faster TSV filling by Cu electrodeposition is required. Our approach to improve Cu gap-filling in TSV is based on the development of new organic additives for feature filling. Here, we introduce our achievements from the synthesis of choline-based leveler to the feature filling using a synthesized leveler. The choline-based leveler, which includes two quaternary ammoniums at both ends of the molecule, is synthesized from glutaric acid. The characteristics of the choline-based additive are examined by the electrochemical analyses, and it is confirmed that the choline-based leveler shows a convection dependent adsorption behavior, which is essential for leveling. The interactions between the polymeric suppressor, accelerator, and the choline-based leveler are also investigated by changing the convection condition. Using the combination of suppressor, accelerator, and the choline-based leveler, the extreme bottom-up filling of Cu at trenches with dimensions similar to TSV are fulfilled. The mechanism of Cu gap-filling is demonstrated based on the results of electrochemical analyses and feature filling.</P> <P><B>Highlights</B></P> <P> <UL> <LI> The choline-based leveler having two quaternary ammoniums was synthesized. </LI> <LI> The adsorption of this leveler with suppressor and accelerator was examined. </LI> <LI> Galvanostatic Cu bottom-up filling was achieved with three-additive system. </LI> <LI> The mechanism of gap-filling was elucidated based on the additive adsorption. </LI> </UL> </P>

Electrochemical Behavior of Citric Acid and Its Influence on Cu Electrodeposition for Damascene Metallization

Kim, Myung Jun,Choe, Seunghoe,Kim, Hoe Chul,Cho, Sung Ki,Kim, Soo-Kil,Kim, Jae Jeong The Electrochemical Society 2015 Journal of the Electrochemical Society Vol.162 No.8

<P>The electrolyte for Cu superfilling generally consists of copper sulfate, sulfuric acid, a chloride ion, an accelerator, and a suppressor. In this study, the characteristics of citric acid-based electrolytes and the interaction between citrate species and accelerators are investigated, with the ultimate goal being the replacement of both sulfuric acid and the suppressor with citric acid. Electrochemical impedance measurements were adopted to measure the changes in solution and charge transfer resistances with respect to citric acid and accelerator concentrations. In addition to a decrease in solution resistance resulting from the addition of citric acid, charge transfer inhibition was observed during Cu electrodeposition, which is likely the result of adsorption of citrate species onto Cu surface. A competitive adsorption between the citrate species and the accelerator was also observed and the new additive system was applied to the feature filling in the absence of the conventional polyethylene glycol suppressor. Using this new copper sulfate, citric acid, chloride ion, and accelerator system, trenches were successfully bottom-up filled, resulting in no internal defects.</P>

Angle-dependent X-ray magnetic circular dichroism study of enhanced perpendicular magnetic anisotropy in hybrid [CoO/Pd]₂[Co/Pd]₇ multilayers

Kim, D.H.,Lee, Eunsook,Kim, Hyun Woo,Seong, Seungho,Yang, Seung-Mo,Park, Hae-Soo,Hong, JinPyo,Kim, Younghak,Kim, J.-Y.,Kang, J.-S. Elsevier 2017 Journal of magnetism and magnetic materials Vol.432 No.-

<P><B>Abstract</B></P> <P>We have investigated the angle-dependent orbital and spin magnetic moments of the [Co/Pd] multilayer (ML) films with intervening CoO layers under annealing by employing angle-dependent soft X-ray magnetic circular dichroism (XMCD). After annealing, the orbital magnetic moments of Co ions are found to be enhanced, with the maximum values along the perpendicular direction of [Co/Pd] ML, providing evidence for the origin of the improved perpendicular magnetic anisotropy (PMA) being the interface spin–orbit coupling. The induced Pd polarization was observed after annealing, demonstrating the strong Co-Pd hybridization arising from the Co-Pd alloy formation near the interface. The angle-dependent coercivity follows the 1 / cos θ behavior, suggesting that the magnetization reversal in the hysteresis curve in [Co/Pd] ML occurs mainly through the pinning mechanism.</P> <P><B>Highlights</B></P> <P> <UL> <LI> Angle-dependent XMCD were performed on hybrid [CoO/Pd]<SUB>2</SUB>[Co/Pd]<SUB>7</SUB> multilayers that exhibit enhanced PMA. </LI> <LI> The enhanced orbital magnetic moments indicates that the origin of the improved PMA is the interface spin–orbit coupling. </LI> <LI> The induced Pd polarization after annealing demonstrates the strong Co-Pd hybridization arising from the Co-Pd alloy formation near the interface. </LI> <LI> The angle-dependent coercivity suggests that the magnetization reversal in [Co/Pd] ML occurs mainly through the pinning mechanism. </LI> </UL> </P>

Electrodeposition of Cu Films with Low Resistivity and Improved Hardness Using Additive Derivatization

Kim, Hoe Chul,Kim, Myung Jun,Choe, Seunghoe,Lim, Taeho,Park, Kyung Ju,Kim, Kwang Hwan,Ahn, Sang Hyun,Kim, Soo-Kil,Kim, Jae Jeong The Electrochemical Society 2014 Journal of the Electrochemical Society Vol.161 No.14

<P>The adsorption mechanism of thiourea (TU) and its effect on Cu electrodeposition were verified using TU derivatization. Contrary to the previously reported behavior of TU as an inhibitor, TU either promoted or inhibited Cu reduction according to the derivatization time. During the short derivatization time, the adsorbed TU with low surface coverage was oxidized to spontaneously reduce Cu<SUP>2+</SUP> to Cu<SUP>+</SUP>, thereby, accelerating the Cu deposition. However, TU inhibited the Cu deposition as the coverage of TU-Cu<SUP>+</SUP> increased with the derivatization time. Furthermore, a deterioration in the resistivity of the Cu film, which occurred when TU was added, was largely improved by the derivatization method while maintaining an enhancement in the film hardness. TU derivatization resulted in a 9.2% enhancement in the film hardness and only a 26.0% deterioration in the film resistivity compared to those of Cu films deposited in the absence of TU, which were not simultaneously obtainable upon the direct addition of TU to the deposition bath.</P>

Application of Flash Lamp Annealing on Nitrogen-Doped Amorphous Indium-Gallium-Zinc-Oxide Thin Film Transistors

Kim, Yoonsuk,Kim, Jinsoo,Kim, Byungkuk,Kim, Hyoung June,Kim, Seok,Choi, Eunsoo,Hwang, Jin-Ha,Park, Seungho Electrochemical Society 2017 ECS journal of solid state science and technology Vol.6 No.12

<P>Amorphous nitrogenated indium-gallium-zinc oxide (a-IGZO:N) thin films were deposited on highly doped silicon (n+Si) wafer substrates and heat-treated by millisecond flash lamp annealing (FLA) at different preheating temperatures to enhance the electrical characteristics of oxynitride thin film transistors (TFTs). A one-dimensional conduction/radiation heat transfer simulation was conducted to predict the temperature fields in the Si substrate, which indicated that the film temperatures during FLA instantaneously rose above 700°C. The electrical characteristics of the a-IGZO:N TFTs were compared with those produced by conventional furnace annealing of one hour. As a result of the FLA process, a remarkable improvement in the TFT device performance was observed in terms of the electrical output characteristics and transfer curves of the a-IGZO:N TFTs. Morphological analyses were conducted using X-ray diffraction, atomic force microscopy, and field emission scanning electron microscopy, indicating the possibility of partial crystallization of the a-IGZO:N channel layers under high-temperature annealing conditions, but the best TFT performance was found for the amorphous phase of IGZO:N.</P>