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Room temperature photoluminescence property of Mo-doped In2O3 thin films
S. Kaleemulla,A. Sivasankar Reddy,S. Uthanna,P. Sreedhara Reddy 한국물리학회 2010 Current Applied Physics Vol.10 No.2
Mo-doped In2O3 thin films have been prepared on glass substrates using an activated reactive evaporation method and systematically studied the effect of oxygen partial pressure on the structural, optical,electrical and photoluminescence properties of the films. The obtained films are highly transparent and conductive. The films exhibited the lowest electrical resistivity of 5.2 × 10-4 Ω cm, with an average optical transmittance of 90% in the visible region. An intensive photoluminescence emission peaks were observed at 415 and 440 nm.
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V. Nirupama,K.R. Gunasekhar,B. Sreedhar,S. Uthanna 한국물리학회 2010 Current Applied Physics Vol.10 No.1
Molybdenum oxide films (MoO3) were deposited on glass and crystalline silicon substrates by sputtering of molybdenum target under various oxygen partial pressures in the range 8 × 10-5–8 × 10-4 mbar and at a fixed substrate temperature of 473 K employing dc magnetron sputtering technique. The influence of oxygen partial pressure on the composition stoichiometry, chemical binding configuration, crystallographic structure and electrical and optical properties was systematically studied. X-ray photoelectron spectra of the films formed at 8 × 10-5 mbar showed the presence of Mo6+ and Mo5+ oxidation states of MoO3 and MoO3-x. The films deposited at oxygen partial pressure of 2 × 10-4 mbar showed Mo6+ oxidation state indicating the films were nearly stoichiometric. It was also confirmed by the Fourier transform infrared spectroscopic studies. X-ray diffraction studies revealed that the films formed at oxygen partial pressure of 2 × 10-4 mbar showed the presence of (0 k 0) reflections indicated the layered structure of α-phase MoO3. The electrical conductivity of the films decreased from 3.6 × 10-5 to 1.6 × 10-6 Ω-1 cm-1, the optical band gap of the films increased from 2.93 to 3.26 eV and the refractive index increased from 2.02 to 2.13 with the increase of oxygen partial pressure from 8 × 10-5 to 8 × 10-4 mbar, respectively.
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