http://chineseinput.net/에서 pinyin(병음)방식으로 중국어를 변환할 수 있습니다.
변환된 중국어를 복사하여 사용하시면 됩니다.
Lightcurve survey of V-type asteroids in the inner asteroid belt
Hasegawa, S.,Miyasaka, S.,Mito, H.,Sarugaku, Y.,Ozawa, T.,Kuroda, D.,Nishihara, S.,Harada, A.,Yoshida, M.,Yanagisawa, K.,Shimizu, Y.,Nagayama, S.,Toda, H.,Okita, K.,Kawai, N.,Mori, M.,Sekiguchi, T.,Is Astronomical Society of Japan 2014 Publications of the Astronomical Society of Japan Vol.66 No.3
Effect of Pressure on the Intermediate-valence Semiconductor SmB6 : 11B-NMR
Kohei Nishiyama,Takeshi Mito,Ko-ichi Ueda,Takehide Koyama,Takao Kohara,Gabriel Prist´aˇs,Slavom´ır Gab´ani,Mari´an Reiffers,Karol Flachbart,Yasuhiro Komaki,Mitsutane Kokubu,Hideto Fukazawa,and Yoh Koh 한국물리학회 2013 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.62 No.12
We report the first high-pressure 11B-NMR studies above 3 GPa on the intermediate-valencesemiconductor SmB6. A 11B-NMR line obtained at 4.9 GPa, the highest pressure for the measurements,and at 1.9 K shows quite similar a line shape to that at ambient pressure, indicating nostructural or magnetic phase transition up to this pressure. The temperature dependence of thespin lattice relaxation rate 1/T1 at 4.9 GPa still exhibits an activation-type temperature dependencecharacteristic of semiconductors, which reveals an obvious decrease in the insulating gap byabout 30% compared to the gap at ambient pressure. The present experimental facts of a finiteinsulator gap and no magnetic order at 4.9 GPa are consistent with recent transport measurementsperformed under better hydrostatic pressures.