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RISS 인기검색어
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- 저자 : Ruiting Zheng (검색결과 2 건)
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Preparation of smooth self-supporting Ni /Cu multilayer
Fengju Gao,Ruiting Zheng,Guoan Cheng,Jing Yu 한국물리학회 2008 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.52 No.-
[Ni(5 nm)/Cu(5 nm)]50 multilayer was deposited on SiN membranes by DC magnetron sputtering. Field emission scanning-electron microscopy (FESEM), atomic-force microscopy (AFM), and X-ray diffraction (XRD) were used to analyze the surface morphology and the microstructure. The surface of the multilayer is continuous and flat, with root-mean-square roughness (RMS) of 9.9 nm. The period of the multilayer is 10.7 nm, which is very close to the designed period of 10 nm. The multilayer was composed of multi-crystal. These results show that this experiment is a promising way to obtain flat self-supporting metal multilayer. [Ni(5 nm)/Cu(5 nm)]50 multilayer was deposited on SiN membranes by DC magnetron sputtering. Field emission scanning-electron microscopy (FESEM), atomic-force microscopy (AFM), and X-ray diffraction (XRD) were used to analyze the surface morphology and the microstructure. The surface of the multilayer is continuous and flat, with root-mean-square roughness (RMS) of 9.9 nm. The period of the multilayer is 10.7 nm, which is very close to the designed period of 10 nm. The multilayer was composed of multi-crystal. These results show that this experiment is a promising way to obtain flat self-supporting metal multilayer.
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Photoluminescence from SiGe NPs: SiO_2 Thin Films Co-doped with Al
Kun Zhong,Guoan Cheng,Xiangqian Cheng,Ruiting Zheng,Zhisong Xiao 한국물리학회 2011 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.58 No.41
Different doses of Al atoms were implanted into SiGe-rich SiO2 thin films, and the impacts of the doping dose and the annealing temperature on the photoluminescence (PL) from these thin films were investigated. Al-doping promoted the nucleation of SiGe nanoparticles (NPs). The addition of Al enhanced the PL intensity owing to an increase in the number of nucleation sites. However, the Al impurity generated a deep recombination level in the band gap of the SiGe NPs. When the Al-doping dose was 6 X 10^(14) cm^(−2), the intensity of the PL reached a maximum.
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