http://chineseinput.net/에서 pinyin(병음)방식으로 중국어를 변환할 수 있습니다.
변환된 중국어를 복사하여 사용하시면 됩니다.
Muchahary Deboraj,Ram Lakum Sai,Narzary Rewrewa,Sahu Partha Pratim,Bhattarai Sagar,Tayal Shubham 한국물리학회 2022 Current Applied Physics Vol.38 No.-
In this work coupled ZnO⋅SnO2 nanocomposite has been used as heterojunction partner to Si for photovoltaic application and its performance is optimized. The interface defect more than 1012 cm-2 reduces the short circuit current density, fill factor and efficiency of the device. In addition, the best device performance is observed at the vicinity of 280K. The junction of the device has a dark saturation current density and ideality factor of the order of 10-4 Acm-2 and 21 respectively. In addition, four different organic materials are used as back surface field layer (BSL) to the same device and performance is improved. The best conversion efficiency and open circuit voltage as high as 4.1% and 0.591 V respectively are obtained for the device with CuSCN as BSL. Consequently, a range of combined values of the energy band gap and electron affinity of the BSL materials are examined for optimal device performance.