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Accurate Compact MOSFET Modeling Scheme for Harmonic Distortion Analysis
Iniguez, B.,Picos, R.,Kwon, I.,Shur, M.S.,Fjeldly, T.A.,Lee, K. The Institute of Electronics and Information Engin 2004 Journal of semiconductor technology and science Vol.4 No.3
We discuss and develop a compact MOSFET modeling scheme in order to obtain accurate descriptions of the drain current and its derivatives up to the 5th order. We have analyzed the physical effects which govern the behaviour of the 3rd derivative in long and deep-subrnicron channel MOSFETs. Our modeling agrees well with experimental data and describes continuous transitions between operating regimes, thanks to the use of continuous functions, which do not introduce any artificial peaks.
Accurate Compact MOSFET Modeling Scheme for Harmonic Distortion Analysis
B. Iniguez,R. Picos,I. Kwon,M. S. Shur,T. A. Fjeldly,K. Lee 대한전자공학회 2004 Journal of semiconductor technology and science Vol.4 No.3
We discuss and develop a compact MOSFET modeling scheme in order to obtain accurate descriptions of the drain current and its derivatives up to the 5th order. We have analyzed the physical effects which govern the behaviour of the 3rd<br/> derivative in long and deep-submicron channel MOSFETs. Our modeling agrees well with experimental data and describes continuous transitions between operating regimes, thanks to the use of continuous functions, which do not introduce any artificial peaks.<br/>