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Microscopic Origin of the Near-Band-Edge Emission in Aqueous Chemically-Grown ZnO Nanorods
C. Bekeny,T. Voss,B. Hilker,J. Gutowski,R. Hauschild,H. Kalt,B. Postels,A. Bakin,A. Waag 한국물리학회 2008 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.53 No.5
The microscopic origin of the near-band-edge emission in low-temperature aqueous chemicallygrown ZnO nanorods is analyzed. For the as-grown nanorods, a broad and almost featureless main emission band at 3.366 eV is observed due the presence of a high donor and defect density. After the nanorods have been annealed at 800 ℃ for 1 hour in an oxygen atmosphere, a remarkable reduction of the linewidth of the near-band-edge emission from 10 meV to 4 meV is observed. Sharp and distinguishable excitonic transitions are visible. Time-resolved photoluminescence measurements show very fast recombination times of 11 ps for the as-grown sample while the radiative recombination time increases to 80 ps after the sample is annealed in oxygen atmosphere.