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상용차용 요소-선택환원촉매 시스템의 탈질성능에 관한 연구
한평현(Pyung Hyun Han),김규홍(Gyu Hong Kim),길정기(Jeong Ki Kil),여권구(Gwon Koo Yeo) 한국자동차공학회 2006 한국자동차공학회 춘 추계 학술대회 논문집 Vol.- No.-
The effect of various factors on NOx conversion was investigated for urea-SCR, the selective catalytic reduction using urea as reducing agent. Zeolite-based SCR catalysts were tested in the ESC test cycle using a 4L diesel engine, with and without diesel oxidation catalyst. The theoretical maximum NOx conversion was considered based on the SCR kinetics and it was compared with the NOx conversions obtained experimentally on various experimental conditions. NH₃/NOx ratio, NO₂/NOx ratio and reaction temperature are the main factors affecting the DeNOx performance of SCR system. Additionally, the distance between urea dosing point and SCR catalyst significantly influences the performance of SCR catalyst.
한성민,조옥현,박평환,곽일용,이건일 대한마취과학회 1980 Korean Journal of Anesthesiology Vol.13 No.1
The anesthetic experience in 20 years was evaluated by statistically analyzing the total of 17,595 cases which were performed at S.N.U.H. from 1960 through 1979 according to age, sex, anesthetic agents and methods. To simplify the analysis, the authors selected the anesthetic cases of 1960, 1965, 1970, 1975, and 1978. The results were as follows: 1) General anesthesia has been used with increasing frequencies and local anesthesia with decreasing frequencies during the period. 2) More than half of the totaI cases were performed for the patients in their second or third decades. 3) General surgery cases were the majority of the total. 4) The usage of halothane has been increased evei since its introduction into clinical anesthesia in this hospital. 5) For intravenous induction, thiopental has been used as the main agent, and succinylcholine and pancuronium as the major musce relaxants since 1975. 6) For anesthetic technique, semiclosed circle absorption system has been employed in almost all cases, and non-rebreathing system has been used recently with increasing frequencies in pediatric anesthesia.
( Myung Han Bae ),( Sung Hyun Jo ),( Min Ho Lee ),( Ju Yeong Kim ),( Jin Hyeon Choi ),( Pyung Choi ),( Jang Kyoo Shin ) 한국센서학회 2012 센서학회지 Vol.21 No.6
A dynamic range extension technique is proposed based on a 3-transistor active pixel sensor (APS) with gate/body-tied p-channel metal oxide semiconductor field effect transistor (PMOSFET)-type photodetector using a feedback structure. The new APS consists of a pseudo 3-transistor APS and an additional gate/body-tied PMOSFET-type photodetector, and to extend the dynamic range, an NMOSFET switch is proposed. An additional detector and an NMOSFET switch are integrated into the APS to provide negative feedback. The proposed APS and pseudo 3-transistor APS were designed and fabricated using a 0.35-Im 2-poly 4-metal standard complementary metal oxide semiconductor (CMOS) process. Afterwards, their optical responses were measured and characterized. Although the proposed pixel size increased in comparison with the pseudo 3-transistor APS, the proposed pixel had a significantly extended dynamic range of 98 dB compared to a pseudo 3-transistor APS, which had a dynamic range of 28 dB. We present a proposed pixel that can be switched between two operating modes depending on the transfer gate voltage. The proposed pixel can be switched between two operating modes depending on the transfer gate voltage: normal mode and WDR mode. We also present an imaging system using the proposed APS.
( Sung Hyun Jo ),( Hee Ho Lee ),( Myung Han Bae ),( Min Ho Lee ),( Ju Yeong Kim ),( Pyung Choi ),( Jang Kyoo Shin ) 한국센서학회 2013 센서학회지 Vol.22 No.4
This paper presents an extension of the dynamic range in a complementary metal-oxide-semiconductor (CMOS) active pixel sensor (APS) using a stacked photodiode and feedback structure. The proposed APS is composed of two additional MOSFETs and stacked P+/N-well/P-sub photodiodes as compared with a conventional APS. Using the proposed technique, the sensor can improve the spectral response and dynamic range. The spectral response is improved using an additional stacked P+/N-well photodiode, and the dynamic range is increased using the feedback structure. Although the size of the pixel is slightly larger than that of a conventional three-transistor APS, control of the dynamic range is much easier than that of the conventional methods using the feedback structure. The simulation and measurement results for the proposed APS demonstrate a wide dynamic range feature. The maximum dynamic range of the proposed sensor is greater than 103 dB. The designed circuit is fabricated by the 0.35-μm 2-poly 4-metal standard CMOS process, and its characteristics are evaluated.