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RISS 인기검색어
- 검색키워드
- 저자 : Porponth Sichanugrist (검색결과 5 건)
- 무료
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Development of Wide Band Gap P-a-SiOxCy:H Using Additional Trimethylboron as Carbon Source Gas
강동원,Porponth Sichanugrist,Bancha Janthong,Muhammad Ajmal Khan,Chisato Niikura,Makoto Konagai 대한금속·재료학회 2016 ELECTRONIC MATERIALS LETTERS Vol.12 No.4
We report p-type a-SiOxCy:H thin films which were fabricated byintroducing additional Trimethylboron (TMB, B(CH3)3) dopinggas into conventional standard p-type a-SiOx:H films. The TMBaddition into the condition of p-a-SiOx:H improved opticalbandgap from 2.14 to 2.20 eV without deterioration of electricalconductivity, which is promising for p-type window layer of thinfilm solar cells. The suggested p-a-SiOxCy:H films were appliedin amorphous silicon solar cells and we found an increase ofquantum efficiency at short wavelength regions due to widebandgap of the new p-layer, and thus efficiency improvementfrom 10.4 to 10.7% was demonstrated in a-Si:H solar cell byemploying the p-a-SiOxCy:H film. In case of a-SiOx:H cell, highopen circuit voltage of 1.01 V was confirmed by using thesuggested the p-a-SiOxCy:H film as a window layer. This new playercan be highly promising as a wide bandgap window layer toimprove the performance of thin film silicon solar cells.
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강동원,Porponth Sichanugrist,Makoto Konagai 대한금속·재료학회 2016 ELECTRONIC MATERIALS LETTERS Vol.12 No.4
We successfully designed and experimentally demonstrated anapplication of patterned MgF2 dielectric material at rear Al-dopedZnO (AZO)/Ag interface in thin film amorphous silicon oxide (a-SiOx:H) solar cells. When it was realized in practical deviceprocess, MgF2 coverage with patterned morphology was employedto allow for current flow between the AZO and Ag against highlyresistive MgF2 material. On the basis of the suggested structure, wefound an improvement in quantum efficiency of the solar cells withthe patterned MgF2. In addition, an enhancement of open circuitvoltage (Voc) and fill factor (FF) was observed. A remarkableincrease in shunt resistance of the cells with the MgF2 wouldpossibly indicate that the highly resistive MgF2 layer can partlysuppress physical shunting across top and bottom electrodes causedby very thin absorber thickness of only 100 nm. The approachshowed that our best-performing device revealed an essentialimprovement in conversion efficiency from 7.83 to 8.01% withachieving markedly high Voc (1.013 V) and FF (0.729).
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Masanobu Isshiki,Porponth Sichanugrist,Yusuke Abe,Takuji Oyama,Hidefumi Odaka,Makoto Konagai 한국물리학회 2014 Current Applied Physics Vol.14 No.12
High transmittance of transparent conductive oxide (TCO) substrates is one of the most important factors for achieving high efficiency in thin-film silicon solar cells. Immersion (IM) method with CH2I2 liquid is widely used for the evaluation of optical properties (transmittance, reflectance and absorption) for TCO substrates with textured surface in order to reduce the scattering at the TCO surface. However, in order to measure transmittance accurately, three problems have been found. (1) CH2I2 liquid itself absorbs the light in short wavelength region. (2) The transmittance around the absorption edge of CH2I2 liquids is very sensitive to its amount. (3) Scattering cannot be suppressed when the scattering surfaces are more than 2 surfaces (for example, TCO on reactive ion etching (RIE) processed glass). To overcome these problems, we proposed a new setup to measure optical properties of TCO substrates by holding the samples inside the integral sphere. As the results, we have confirmed that their absorption in all wavelength could be measured accurately and the transmittance measured by the new method was well consistent with the external quantum efficiency (EQE) of the fabricated cell while the transmittance measured with conventional IM method showed differently. Therefore, this new method could be a useful tool to evaluate TCO substrates for thin-film silicon solar cells.
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Highly transparent Zn1-xMgxO/ITO multilayer for window of thin film solar cells
강동원,Amartya Chowdhury,Porponth Sichanugrist,Yusuke Abe,Hirofumi Konishi,Yuki Tsuda,Tomohiro Shinagawa,Hidetada Tokioka,Hiroyuki Fuchigami,Makoto Konagai 한국물리학회 2015 Current Applied Physics Vol.15 No.9
Texture-etched Zn1-xMgxO films were fabricated and applied as front transparent electrodes for superstrate type thin film solar cells. The Zn0.65Mg0.35O film (x = 0.35) showed optical transparency better than commercially available Asahi VU and double-textured ZnO (WT-ZnO) substrates. To provide pertinent conductivity, ITO film was coated on the texture-etched Zn0.65Mg0.35O. By employing the Zn0.65Mg0.35O/ITO substrate instead of the SnO2, we demonstrated an enhancement of quantum efficiency for amorphous silicon thin film solar cell devices, resulted in efficiency improvement from 8.92 to 9.56%. We also examined effectiveness of the Zn0.65Mg0.35O/ITO substrate for the microcrystalline silicon solar cells which delivered an efficiency of 9.73% with proper anti-reflection coating. Our experimental results suggest that the Zn0.65Mg0.35O/ITO multilayer front contact can be beneficial for reinforcing performances of silicon-based thin film solar cell devices.
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Taweewat Krajangsang,Shunsuke Kasashima,Aswin Hongsingthong,Porponth Sichanugrist,Makoto Konagai 한국물리학회 2012 Current Applied Physics Vol.12 No.2
Preparation of p-type hydrogenated microcrystalline silicon oxide thin films (p-mc-Si1-xOx:H) by 13.56 MHz RF-PECVD method for use as a p-layer of hetero-junction mc-Si:H solar cells is presented. We investigated effects of wide-gap p-mc-Si1-xOx:H layer on the performance of hetero-junction mc-Si:H solar cells under various light intensity. We observed that a wide-gap p-mc-Si1-xOx:H was effective in improving the open-circuit voltage (Voc) of the solar cells. We also confirmed that the Voc logarithmically increased with increasing light intensity, and the enhancement of Voc became larger with increasing band gap of p-layer. These results indicate that wide-gap p-mc-Si1-xOx:H is a promising material for use as window layer in hetero-junction mc-Si:H solar cells.
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