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Park Gyoung Du,Ha Jae Du,Kang Tae In,Kim Jong Su,Kim Yeongho,Lee Sang Jun,Han Im Sik 한국물리학회 2023 Current Applied Physics Vol.50 No.-
The p-n junction electric field (Fpn) of InAs quantum dot solar cell (QDSC) structure was investigated using photoluminescence and photoreflectance spectroscopy. Quantum dot (QD) was fabricated by the Stranski- Krastanov (S–K) and sub-monolayer (SML) methods. From photoreflectance results, the higher Fpn of SML than S–K QDSC from 20 K to 160 K presents that the background carrier concentration of SML QDSC decreases, due to the reduced defect density. Moreover, the SML QDSC shows lower Fpn than S–K QDSC due to the strengthened field screening effect from 160 K to 300 K. This is caused by the improved carrier thermally escaping from the SML QDs and the decreased photo-generated carrier trapping because of the reduced density of defects. The low strain-related defect density improves the efficiency of QDSC. Therefore, the Fpn obtained through the FKO signal from the photoreflectance spectrum could be a reliable method for analyzing the QDSC efficiency.
Internal Electric Fields of Flexible GaAs Solar Cells Fabricated Using Epitaxial Lift-off
Mo Geun So,Hyun Jun Jo,Gyoung Du Park,Jae-Jin Shim,Woo Kyoung Kim,Yeongho Kim,Sang Jun Lee,Jong Su Kim 한국진공학회(ASCT) 2020 Applied Science and Convergence Technology Vol.29 No.1
We have investigated the optical and electrical properties of flexible GaAs solar cells (SCs) fabricated by the epitaxial lift-off process using photoreflectance (PR) spectroscopy. The as-grown GaAs solar cells were transferred on Au/polyimide (ELA) and polydimethylsiloxane (PDMS; ELP) flexible substrates. In the PR spectra, low energy interference oscillations by internal multi-reflection were observed below the GaAs transition signals. The internal electric fields (Fint) were calculated to be 98.7 and 81.8 kV/cm for the ELA and ELP SCs, respectively. SCs produced by the ELA process exhibited fewer defects and higher Fint than the ELP SC.