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PREPARATION OF SILICON OXIDE FILMS WITH HIGH WATER REPELLENCY BY RF PLASMA-ENHANCED CVD
Hinzumi, Atsushi,Sekoguchi, Hiroki,Kakinoki, Nobuyuki,Takai, Osamu 한국재료학회 1995 Fabrication and Characterization of Advanced Mater Vol.2 No.e3
Silicon oxide films contained fluoro-alkyl functions(FAFs ; $CF_3$, $CF_2$ and CF functions) were prepared on the polycarbonate(PC), glass and Si substrates by rf plasma-enhanced CVD(PECVD). The fluoro-alkyl silanes(FASs ; $CF_3(CF_2)nCH_2CH_2Si(OCH_3)_3, \;n=0, 5, 7)$ were used as raw materials. The substrate temperature during deposition was around $50^{\circ}C$. The obtained films had good water repellency. The maximum contact angle for a water drop was 107 degrees. The transmittance of the PC substrate was improved by the coating form 87% to 90%. These films also have a function as an antireflective coating.