http://chineseinput.net/에서 pinyin(병음)방식으로 중국어를 변환할 수 있습니다.
변환된 중국어를 복사하여 사용하시면 됩니다.
- 中文 을 입력하시려면 zhongwen을 입력하시고 space를누르시면됩니다.
- 北京 을 입력하시려면 beijing을 입력하시고 space를 누르시면 됩니다.
RISS 인기검색어
- 검색키워드
- 저자 : Nishad G. Deshpande (검색결과 4 건)
- 무료
- 기관 내 무료
- 유료
-
Jung, Sung Hyeon,Deshpande, Nishad G.,Kim, Young Been,Kim, Dong Su,Cho, Hyung Koun American Chemical Society 2019 ACS APPLIED MATERIALS & INTERFACES Vol.11 No.31
<P>Rapid degradations are typically encountered in low-temperature processed oxide thin-film transistors (TFTs) with a high indium composition and quasi-two-dimensional (Q2D) thin channel, owing to the breaking of numerous surface bonds of the Q2D oxide and the ineffectiveness of oxidation treatment. Strategically, a novel approach is proposed for the effective use of non-centrosymmetric nitrous oxide (NO<SUB>2</SUB>) as a reactive oxidizer gas for realizing the highly robust and rapid field-effect mobility properties of low-temperature-processed Q2D amorphous indium zinc oxide (a-IZO) TFTs. From the surface chemical analysis, it is found that NO<SUB>2</SUB> stably reconstructs surface chemical bonding with NO<SUB>3</SUB><SUP>-</SUP> ions by capturing the charged electrons and oxygen and the regions with and without NO<SUB>2</SUB> treatment display extreme differences in their electrical conductivity. Thus, a new process design can be suggested for the fabrication of self-aligned coplanar Q2D transistors, with the aim of scaling down and replacing conventional hydrogen treatment or ultraviolet irradiation. This concept is tactically designed considering the problematic aging effect and impact of the NO<SUB>2</SUB> treatment. The self-aligned coplanar top-gate Q2D a-IZO TFTs exhibit outstanding device performance with a field-effect mobility of 30.1 cm<SUP>2</SUP> V<SUP>-1</SUP> s<SUP>-1</SUP> and a relatively low positive bias stress shift of 1.3 V at an extremely low process temperature of 80 °C.</P> [FIG OMISSION]</BR>
-
Kim, Joo Sung,Cho, Sung Woon,Deshpande, Nishad G.,Kim, Young Been,Yun, Young Dae,Jung, Sung Hyeon,Kim, Dong Su,Cho, Hyung Koun American Chemical Society 2019 ACS APPLIED MATERIALS & INTERFACES Vol.11 No.16
<P>To date, TiO<SUB>2</SUB> films prepared by atomic layer deposition are widely used to prepare Cu<SUB>2</SUB>O nanowire (NW)-based photocathodes with photoelectrochemical (PEC) durability as this approach enables conformal coating and furnishes chemical robustness. However, this common approach requires complicated interlayers and makes the fabrication of photocathodes with reproducible performance and long-term stability difficult. Although sol-gel-based approaches have been well established for coating surfaces with oxide thin films, these techniques have rarely been studied for oxide passivation in PEC applications, because the sol-gel coating methods are strongly influenced by surface chemical bonding and have been mainly demonstrated on flat substrates. As a unique strategy based on solution processing, herein, we suggest a creative solution for two problems encountered in the conformal coating of surfaces with oxide layers: (i) how to effectively prevent corrosion of materials with hydrophilic surfaces by simply using a single TiO<SUB>2</SUB> surface protection layer instead of a complex multilayer structure and (ii) guaranteeing perfect chemical durability. A Cu(OH)<SUB>2</SUB> NW can be easily prepared as an intermediate phase by anodization of a Cu metal, where the former inherently possesses a hydrophilic hydroxylated surface and thus, enables thorough coating with TiO<SUB>2</SUB> precursor solutions. Chemically robust nanowires are then generated as the final product via the phase transformation of Cu(OH)<SUB>2</SUB> to Cu<SUB>2</SUB>O via sintering at 600 °C. The coated NWs exhibit excellent PEC properties and a stable performance. Consequently, the perfect chemical isolation of the Cu<SUB>2</SUB>O NWs from the electrolyte allows a remarkable PEC operation with the maintenance of the initial photocurrent for more than one day.</P> [FIG OMISSION]</BR>
-
-
Jung, Sung Hyeon,Ahn, Cheol Hyoun,Kim, Young Been,Kim, Dong Su,Deshpande, Nishad G.,Cho, Hyung Koun ELSEVIER 2019 MICROELECTRONIC ENGINEERING Vol.216 No.-
<P><B>Abstract</B></P> <P>The high demand for flexible and stretchable electronics has resulted in new bottlenecks on the process design of amorphous oxide thin-film transistors (TFTs) fabricated at ≥300 °C that involves low-temperature processes to accommodate for the use of polymer substrates. Unlike previous studies aiming to achieve better channel properties, our study focuses on the low-temperature effects of electrical contacts at the source/drain electrodes and oxide channel junction. The decrease in the process temperature causes unfavorable evident changes from an almost ohmic (350 °C) to Schottky (200 °C) junction and shows coincident trends with the degradation of TFT performances. Thus, we here propose a creative process design using ultrathin Al<SUB>2</SUB>O<SUB>3</SUB> interlayers between the electrode and channel, where they inactivate the role of numerous surface defects existing on the <I>a</I>-IZO channels deposited at low temperatures. The <I>a</I>-IZO TFT with 13 Å Al<SUB>2</SUB>O<SUB>3</SUB> optimally exhibits a field effect mobility of 17.3 cm<SUP>2</SUP>/Vs in the 200 °C low-temperature annealing process, comparable to that of <I>a</I>-IZO TFT annealed at 350 °C. Similarly, the ultrathin Al<SUB>2</SUB>O<SUB>3</SUB> interlayers led to the reduced specific contact resistance and ohmic junction behavior. From capacitance–voltage analyses, we elucidated that they were attributed to the significantly reduced trapping events of the charges by passivating the interface defects.</P> <P><B>Highlights</B></P> <P> <UL> <LI> We developed an approach reducing interface contact resistance. </LI> <LI> Ohmic junction in low temperature process could be obtained with ultrathin Al<SUB>2</SUB>O<SUB>3</SUB> layer. </LI> <LI> Ultrathin Al<SUB>2</SUB>O<SUB>3</SUB> layer effectively suppressed the contribution of interface defects. </LI> <LI> This approach was effective in all low-temperature processed oxide TFTs. </LI> </UL> </P> <P><B>Graphical abstract</B></P> <P>[DISPLAY OMISSION]</P>
연관 검색어 추천
이 검색어로 많이 본 자료
활용도 높은 자료
