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RISS 인기검색어
- 검색키워드
- 저자 : Ngo Xuan Dai (검색결과 4 건)
- 무료
- 기관 내 무료
- 유료
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Fabrication and Photoluminescence Properties of ZnS Nanoribbons and Nanowires
Ngo Xuan Dai,Do Thanh Long,Nguyen Ngoc Long,Nguyen Thi Thuc Hien 한국물리학회 2008 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.52 No.5
Zinc-sulfide (ZnS) nanoribbons and nanowires were fabricated via thermal evaporation of ZnS powder using a gold catalyst. The ZnS nanoribbons had thicknesses of about 100 nm, lateral di- mensions of several micrometers and lengths of hundreds to thousands of micrometers. The ZnS nanowires have diameters of 200 nm and lengths of thousands of micrometers. The photolumines- cence of the as-synthesized ZnS nanostructures in temperature range from 15 K to room temperature was investigated. We observed two groups of lines, one in the ultraviolet (UV) and one in the visible regions of the photoluminescence spectrum, at 15 K for the ZnS nanoribbons and nanowires. The UV lines were located at 3.777 eV (328.3 nm), 3.735 eV (332.0 nm), 3.699 eV (335.2 nm), 3.657 eV (339.0 nm), 3.618 eV (342.7 nm), 3.573 eV (347.0 nm) and 3.391 eV (365.6 nm). The visible lines were located at 3.024 eV (410.0 nm), 2.842 eV (436.3 nm) and 2.450 eV (506.1 nm). The origins of these emission lines will be discussed. Zinc-sulfide (ZnS) nanoribbons and nanowires were fabricated via thermal evaporation of ZnS powder using a gold catalyst. The ZnS nanoribbons had thicknesses of about 100 nm, lateral di- mensions of several micrometers and lengths of hundreds to thousands of micrometers. The ZnS nanowires have diameters of 200 nm and lengths of thousands of micrometers. The photolumines- cence of the as-synthesized ZnS nanostructures in temperature range from 15 K to room temperature was investigated. We observed two groups of lines, one in the ultraviolet (UV) and one in the visible regions of the photoluminescence spectrum, at 15 K for the ZnS nanoribbons and nanowires. The UV lines were located at 3.777 eV (328.3 nm), 3.735 eV (332.0 nm), 3.699 eV (335.2 nm), 3.657 eV (339.0 nm), 3.618 eV (342.7 nm), 3.573 eV (347.0 nm) and 3.391 eV (365.6 nm). The visible lines were located at 3.024 eV (410.0 nm), 2.842 eV (436.3 nm) and 2.450 eV (506.1 nm). The origins of these emission lines will be discussed.
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On the Structured Green Band in ZnO Nanowires
Nguyen Thi Thuc Hien,Ngo Xuan Dai,Nguyen Ngoc Long 한국물리학회 2008 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.52 No.5
ZnO nanowires have been synthesized by using the vapor evaporation method. The material source was ZnO powder mixed with graphite. The nanowires have the shape of long rods with diameters ranging from 100 to 300 nm and lengths of several tens of micrometers. The photolu- minescence (PL) was measured from 15 K to 300 K. At room temperature, the PL exhibited a relatively strong deep-level emission around 500 nm (green band) and a small UV emission peak at 380 nm (UV band). At low temperatures, the PL spectrum consisted of a group of sharp UV peaks and a smaller green band having the ne structure of a broad multiphonon side band. The ne structure was observed to include doublets at the higher energy side. The temperature dependences of the peak position and of the full width at half maximum height (FWHM) of the PL spectra for green band were investigated. The origin of the green band is attributed to a copper impurity. ZnO nanowires have been synthesized by using the vapor evaporation method. The material source was ZnO powder mixed with graphite. The nanowires have the shape of long rods with diameters ranging from 100 to 300 nm and lengths of several tens of micrometers. The photolu- minescence (PL) was measured from 15 K to 300 K. At room temperature, the PL exhibited a relatively strong deep-level emission around 500 nm (green band) and a small UV emission peak at 380 nm (UV band). At low temperatures, the PL spectrum consisted of a group of sharp UV peaks and a smaller green band having the ne structure of a broad multiphonon side band. The ne structure was observed to include doublets at the higher energy side. The temperature dependences of the peak position and of the full width at half maximum height (FWHM) of the PL spectra for green band were investigated. The origin of the green band is attributed to a copper impurity.
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Synthesis and Quality of Cr-doped AlN Thin Films Grown by RF Sputtering
Pham Hong Quang,Tran Quang Hung,Ngo Xuan Dai,Tran Hoai Thanh,Kim CheolGi 한국자기학회 2007 Journal of Magnetics Vol.12 No.4
The AlCrN films were grown by RF reactive sputtering method under the selected conditions. The Cr concentration was varied by the number of Cr pieces placed on the Al target. The sample quality has been studied by XRD, Auger spectroscopy, optical absorption and electrical resistant measurements. The XRD and Auger results show that the samples consist of a major phase with the Al1-xCrxN formula, which has a hexagonal structure, and a few percents at. of oxygen, which may form Al₂O₃. There exist the Cr clusters in the samples with high concentration of Cr. The optical absorption measurement provides the information about the band gap that relates strongly to the quality of samples. The quality of samples is also clearly reflected in electrical measurement, i.e., the temperature dependence of resistance exhibits a semiconductor characteristic only for the samples that have no Cr cluster. In these cases, the values of ionization energies Ea can be derived from R(T) plots by using the function R(T) = Ro exp (Ea/kBT).
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