http://chineseinput.net/에서 pinyin(병음)방식으로 중국어를 변환할 수 있습니다.
변환된 중국어를 복사하여 사용하시면 됩니다.
Duraisamy, Navaneethan,Kwon, Ki Rin,Jo, Jeongdai,Choi, Kyung-Hyun American Scientific Publishers 2014 Journal of nanoscience and nanotechnology Vol.14 No.8
<P>This article presents the non-vacuum technique for the preparation of nanostructured zinc oxide (ZnO) thin film on glass substrate through electrohydrodynamic atomization (EHDA) technique. The detailed process parameters for achieving homogeneous ZnO thin films are clearly discussed. The crystallinity and surface morphology of ZnO thin film are investigated by X-ray diffraction and field emission scanning electron microscopy. The result shows that the deposited ZnO thin film is oriented in the wurtzite phase with void free surface morphology. The surface roughness of deposited ZnO thin film is found to be ~17.8 nm. The optical properties of nanostructured ZnO thin films show the average transmittance is about 90% in the visible region and the energy band gap is found to be 3.17 eV. The surface chemistry and purity of deposited ZnO thin films are analyzed by fourier transform infrared and X-ray photoelectron spectroscopy, conforming the presence of Zn-O in the deposited thin films without any organic moiety. The photocurrent measurement of nanostructured ZnO thin film is examined in the presence of UV light illumination with wavelength of 365 nm. These results suggest that the deposited nanostructured ZnO thin film through EHDA technique possess promising applications in the near future.</P>
Duraisamy, Navaneethan,Ponniah, Ganeshthangaraj,Jo, Jeongdai,Choi, Kyung-Hyun American Scientific Publishers 2013 Journal of nanoscience and nanotechnology Vol.13 No.8
<P>This paper is focused on printed techniques for the fabrication of hybrid structure of silver (Ag) grid/poly(3,4-ethylenedioxythiophene): Poly(styrenesulfonate) (PEDOT:PSS) on polyethylene terepthalate (PET) as a flexible substrate. Ag grid has been printed on PET substrate by using gravure offset printing process, followed by PEDOT:PSS thin film deposition on Ag grid through electrohydrodynamic atomization (EHDA) technique. The important parameters for achieving uniform hybrid structure of Ag grid/PEDOT:PSS through printed techniques have been clearly discussed. Field emission scanning electron microscope studies revealed the uniformity of printed Ag grid with homogeneous deposition of PEDOT:PSS on Ag grid. The optical properties of Ag grid/PEDOT:PSS were measured by UV-visible spectroscopy, which showed nearly 80-82% of transparency in the visible region and it was nearly same as PEDOT:PSS thin film on PET substrate. Current-voltage (I-V) analysis of fabricated hybrid device by using printed Ag grid/PEDOT:PSS as a bottom electrode showed good rectifying behavior with possible interfacial mechanisms. Capacitance-voltage (C-V) analysis was carried over different frequencies. These results suggest that fabrication of hybrid structure through printed techniques will play a significant role in mass production of printed electronic devices for commercial application by using flexible substrate.</P>
Nauman Malik Muhammada,Navaneethan Duraisamy,Khalid Rahman,Hyun Woo Dang,Jeongdae Jo,Kyung Hyun Choi 한국물리학회 2013 Current Applied Physics Vol.13 No.1
An all printed resistive memory device, a 9-bit memristor, has been presented in this study consisting of 3 x 3 memristor crossbars deposited via electrohydrodynamic inkjet printing process at room conditions. Transparent zinc oxide active nano-layers, directly deposited by electrospray process, are sandwiched between the crossbars to complete the metaleinsulator metal structure consisting of copper ezinc oxideesilver, where Cu and Ag are used as bottom and top electrodes respectively. The 9-bit memristor device has been characterized using currentevoltage measurements to investigate the resistive switching phenomenon thereby confirming the memristive pinched hysteresis behavior signifying the readewrite and memory characteristics. The memristor device showed a current bistability due to the existence of metaleoxide layer which gives rise to oxygen vacancies upon receiving the positive voltage hence breaking down into doped and un-doped regions and a charge transfer takes place. The maximum ON/OFF ratio of the current bi-stability for the fabricated memristor was as large as 1 x 103, and the endurance of ON/OFF switchings was verified for 500 readewrite cycles. The metale insulatoremetal structure has been characterized using X-ray diffraction, X-ray photoelectron spectroscopy and scanning electron microscope techniques.