RISS 학술연구정보서비스

검색
다국어 입력

http://chineseinput.net/에서 pinyin(병음)방식으로 중국어를 변환할 수 있습니다.

변환된 중국어를 복사하여 사용하시면 됩니다.

예시)
  • 中文 을 입력하시려면 zhongwen을 입력하시고 space를누르시면됩니다.
  • 北京 을 입력하시려면 beijing을 입력하시고 space를 누르시면 됩니다.
닫기
    인기검색어 순위 펼치기

    RISS 인기검색어

      검색결과 좁혀 보기

      선택해제

      오늘 본 자료

      • 오늘 본 자료가 없습니다.
      더보기
      • 무료
      • 기관 내 무료
      • 유료
      • KCI등재후보

        NEW ENHANCED NOISE ANALYSIS IN ACTIVE MIXERS IN NANOSCALE TECHNOLOGIES

        DAVOOD FATHI,BEHJAT FOROUZANDEH,NASSER MASOUMI 성균관대학교(자연과학캠퍼스) 성균나노과학기술원 2009 NANO Vol.4 No.4

        In this paper, a new enhanced noise analysis for active mixers in nanoscale technologies, based on the variations of the two parameters W/L (transistor size) and fLO (local oscillator frequency) is presented. In this study, two important sections of an active mixer, the switching pair and the transconductor are considered. It is shown that the noise generated by the switching pair and the transconductor is reduced with the technology scaling from 90 nm to 45 nm. Also, it is shown that the variations of the noise generated by the switching pair due to W/L variations in a wide range of local oscillator frequency and in different technology nodes is less than the variations of the noise generated by the transconductor, which shows the importance of the transconductor in the generation of the total mixer output noise. For extracting the noise relations, the contribution of the gate resistance noise to the gate and drain total current noises is considered, whereas this noise is usually assumed to be an independent source in the literature.

      연관 검색어 추천

      이 검색어로 많이 본 자료

      활용도 높은 자료

      해외이동버튼