http://chineseinput.net/에서 pinyin(병음)방식으로 중국어를 변환할 수 있습니다.
변환된 중국어를 복사하여 사용하시면 됩니다.
E. Çadlrll,U. Böyük,H. Kaya,N. Mara ll 대한금속·재료학회 2012 METALS AND MATERIALS International Vol.18 No.2
Sn-Bi-Zn lead free solder alloy was directionally solidified upward at a constant temperature gradient (G=3.99K/mm) with a wide range of growth rates (8.3-478.6 µm/s) and at a constant growth rate (V=8.3 µm/s) with a wide range of temperature gradients (1.78-3.99 K/mm) using a Bridgman type directional solidification furnace. Wavelength-Dispersive X-ray Fluorescence spectrometry and X-ray diffraction were used to identify the compositions and phases in the microstructure. Dependence of eutectic spacings (λ) on the growth rate (V), temperature gradient (G) and cooling rate ( ) were determined using linear regression analysis. From the experimental results, it can be concluded that the values of λ decrease with the increasing the values of V, G and . The value of λ2V was determined using the measured values of λ and V. The results obtained in the present work have been compared with previous results obtained for binary or ternary alloys.
Determination of Interfacial Energies for Solid Al Solution in Equilibrium with Al-Cu-Ag Liquid
K. Ke lio lu,Y. Ocak,S. Aksöz,N. Mara ll,E. Çadlrll,H. Kaya 대한금속·재료학회 2010 METALS AND MATERIALS International Vol.16 No.1
The equilibrated grain boundary groove shapes of a solid Al solution in equilibrium with Al-Cu-Ag liquid were observed from a quenched sample using a radial heat flow apparatus. The Gibbs-Thomson coefficient,solid-liquid interfacial energy, and grain boundary energy of the solid Al solution were determined from the observed grain boundary groove shapes. The thermal conductivity of the solid phase for Al-16.42 at.% Ag-4.97at.% Cu and Al-16.57 at.% Ag-11.87 at.% Cu alloys and the thermal conductivity ratio of the liquid phase to the solid phase for Al-16.57 at.% Ag-11.87 at.% Cu alloy at the melting temperature were also measured with a radial heat flow apparatus and a Bridgman-type growth apparatus, respectively.