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- 저자 : Mustuo (검색결과 3 건)
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Self-organized InAs quantum dots grown in a V-groove InGaAs quantum wire
Son, Chang-Sik,Ogura, Mustuo,Sung, Yun Mo,Leem, Si Jong,Kim, Tae Geun WILEY-VCH Verlag 2007 Physica status solidi. PSS. A, Applications and ma Vol.204 No.9
<P>Self-organized InAs quantum dots (QDs), by the Stranski–Krastanow mode, have been grown by using low-pressure metalorganic chemical vapor deposition on V-groove GaAs substrates. By adjusting the flow rate of AsH<SUB>3</SUB> during the growth of InAs QDs, a one dimensional InAs QD array was successfully formed along the [0<TEX>$ \bar 1 $</TEX>1] direction only at the bottom of V-grooves. No QDs were observed on the sidewalls and the surface of the mesa top. The InAs QDs took on an oval shape. They were spatially well-isolated along the [0<TEX>$ \bar 1 $</TEX>1] direction with a line density of 3 × 10<SUP>3</SUP> cm<SUP>–1</SUP>. These low-density InAs QDs are expected to be used in areas of quantum information and quantum computing. (© 2007 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)</P>
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Keiki Morimoto,Toshimitsu Doi,Mustuo Nakaoka,Hyun Woo Lee 전력전자학회 2004 ICPE(ISPE)논문집 Vol.- No.-
This paper presents a new circuit topology of DC busline switch-assisted full-bridge soft-switching PWM inverter type DC-DC power converter which is composed of conventional voltage source full-bridge type high frequency PWM inverter in addition to a single DC busline side power semiconductor switching device for PWM scheme and a capacitive lossless snubber. Under the newly-proposed high frequency inverter link DC-DC high power conditioning and processing circuit, all active power switches in the full-bridge arms and DC busline can achieve ZVS/ZVT turn-off commutation operation. On the other hand, although the conduction power loss of DC busline switch increases a little, the total turn-off switching losses of full-bridge type PWM inverter and DC busline switch with the single lossless capacitive snubber parallel with DC busline can be significantly decreased. As a result, the switching frequency of high frequency inverter power stage using IGBTs can be actually selected under a condition of switching frequency more than about 10kHz. The more the switching frequency of full-bridge inverter increases, the more newly-proposed soft-switching DC-DC power converter with a high frequency transformer link has remarkable advantage as for the power conversion efficiency and power density as compared with the conventional hard-switching inverter type DCDC<br/> power converter. The effectiveness of this new converter topology is proved for low voltage and large current DC power supplies from a practical point of views.
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Red Emission from Eu-Implanted GaN
손창식,김성일,Akihiro Wakahara,Hisao Tanoue,최인훈,Mustuo Ogura,Yong Tae Kim,김영환 한국물리학회 2004 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.45 No.3
Eu ions were implanted into GaN epilayers on sapphire substrates. Sharp visible red emission lines due to inner 4f shell transitions for Eu3+ can be observed from the photoluminescence of Eu-implanted GaN. The 5D0 !7F2 transition produces the strongest red emission line. Minor lines are observed in the given spectral range. The lines at 546, 603, 624, and 667 nm are assigned to 5D1 !7F1 and 5D0 !7F1;2;3 transitions, respectively. These emission lines are little changed with varying temperature. Eu-implanted GaN can be a suitable material for application in red emission devices.
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