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Upgrading flexural performance of prefabricated sandwich panels under vertical loading
Kabir, M.Z.,Rezaifar, O.,Rahbar, M.R. Techno-Press 2007 Structural Engineering and Mechanics, An Int'l Jou Vol.26 No.3
3-D wall panels are used in construction of exterior and interior bearing and non-load bearing walls and floors of building of all types of construction. Fast construction, thermal insulation, reduced labor expense and weight saving are the most well pronounced advantage of such precast system. When the structural performance is concerned, the main disadvantage of 3D panel, when used as floor slab, is their brittleness in flexure. The current study focuses on upgrading ductility and load carrying capacity of 3D slabs in two different ways; using additional tension reinforcement, and inserting a longitudinal concentrated beam. The research is carried on both experimentally and numerically. The structural performance in terms of load carrying capacity and flexural ductility are discussed in details. The obtained results could give better understanding and design consideration of such prefabricated system.
Modeling of transient and steady-state dark current in amorphous silicon p–i–n photodiodes
S.A. Mahmood,M.Z. Kabir 한국물리학회 2009 Current Applied Physics Vol.9 No.6
A theoretical model for describing the bias-dependent transient and steady-state behavior of dark current in hydrogenated amorphous silicon (a-Si:H) p–i–n photodiode has been developed. An analytical expression for the bias-dependent steady-state thermal generation current is derived by solving the continuity equations for both electrons and holes. The model for describing transient dark current in a-Si:H p–i–n photodiode is developed by considering the depletion of electrons from the i-layer and carrier injection through p–i interface. For photodiodes that have very good junction properties, the high initial dark current decreases with time monotonously and reaches a plateau. However, in case of poor junctions, the injection current can be the dominating mechanism for transient leakage current at relatively high biases, the dark current decays initially and then rises to a steady-state value. The proposed physics-based dark current model is compared with published experimental results on several photodiodes. The comparison of the model with the experimental data allows an estimate of active dopant concentration in the p-layer and the defect density in the midgap of i-layer. A theoretical model for describing the bias-dependent transient and steady-state behavior of dark current in hydrogenated amorphous silicon (a-Si:H) p–i–n photodiode has been developed. An analytical expression for the bias-dependent steady-state thermal generation current is derived by solving the continuity equations for both electrons and holes. The model for describing transient dark current in a-Si:H p–i–n photodiode is developed by considering the depletion of electrons from the i-layer and carrier injection through p–i interface. For photodiodes that have very good junction properties, the high initial dark current decreases with time monotonously and reaches a plateau. However, in case of poor junctions, the injection current can be the dominating mechanism for transient leakage current at relatively high biases, the dark current decays initially and then rises to a steady-state value. The proposed physics-based dark current model is compared with published experimental results on several photodiodes. The comparison of the model with the experimental data allows an estimate of active dopant concentration in the p-layer and the defect density in the midgap of i-layer.