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H. Saïdi,C. Ben Alaya,M.F. Boujmil,B. Durand,J.L. Lazzari,M. Bouaïcha 한국물리학회 2020 Current Applied Physics Vol.20 No.1
P-type CIGS (CuIn1-xGaxSe2) thin films are electro-deposited on a p-type c-Si substrate with a galvanostatic mode to form CIGS(p)/c-Si(p) hetero-junction. The Ga content is varied up to x=30%. The physical properties of formed CIGS films are characterized by XRD, SEM, EDS and UV–Visible spectroscopy. With x=30%, we obtain a single chalcopyrite phase of CIGS with a tetragonal crystal structure, a high crystallinity, an orientation toward the (112) direction and a band gap energy of 1.40 eV. AM1.5 J-V performed on the CuI0.7G0.3Se2/c-Si hetero-junction reveals interesting photovoltaic parameters with an efficiency of 3.75%. In addition, using the energy diagram of the hetero-junction calculated with the Anderson model, we show that it could play a dual role when combined to a c-Si cell in a Ag–Al/c-Si(n+)/c-Si (p)/CIGS(p)/Al new architecture. Therefore, in addition to its interesting photovoltaic parameters, this heterojunction can substitute the BSF.